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The Effect of HCl on Silicon Point Defect Formation During Thermal Oxidatign of (100) Float Zone Silicon Wafers: A Theoretical Analysis

Published online by Cambridge University Press:  28 February 2011

Seajin Oh ,
W.A. Tiller  and
Soo Kap Hahin
Seajin Oh
Affiliation:
Departament of Materials Science and Engineering, Stanford University, Stanford, CA 94305
W.A. Tiller
Affiliation:
Departament of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Soo Kap Hahin
Affiliation:
Siltec Corporation, 423 National Avenue, Mountain View, CA 94043
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Abstract

The effect of HCl in an oxidizing ambient on Si interstitial formation during oxidation has been studied by the buried marker diffusion technique. Adding HCl reduces the self-interstitial flux generated at the oxidation front but it does not completely eliminate it. A uniform blocking layer model predicts fairly well the Cl effect on self-interstitial generation during the thermal oxidation. By reducing the rigidity of the SiO2, Cl incorporation into the SiO2 is strongly proposed to alter the Si interstitial partition coefficient at the interface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 39
Copyright
Copyright © Materials Research Society 1986

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