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Effect of Nanocavities on the Thermoelectric Properties of Polycrystalline Silicon

Published online by Cambridge University Press:  11 October 2011

Ekaterina Selezneva ,
Andrea Arcari ,
Gilles Pernot ,
Elisabetta Romano ,
Gianfranco Cerofolini ,
Rita Tonini ,
Stefano Frabboni ,
Giampiero Ottaviani ,
Ali Shakouri  and
Dario Narducci
Ekaterina Selezneva
Affiliation:
Department of Materials Science, University of Milano-Bicocca, via R. Cozzi 53, 20125 Milano, Italy
Andrea Arcari
Affiliation:
Department of Materials Science, University of Milano-Bicocca, via R. Cozzi 53, 20125 Milano, Italy
Gilles Pernot
Affiliation:
Department of Electrical Engineering, University of California, 1156 High Street, 95064 Santa Cruz, U.S.A
Elisabetta Romano
Affiliation:
Department of Materials Science, University of Milano-Bicocca, via R. Cozzi 53, 20125 Milano, Italy
Gianfranco Cerofolini
Affiliation:
Department of Materials Science, University of Milano-Bicocca, via R. Cozzi 53, 20125 Milano, Italy
Rita Tonini
Affiliation:
Department of Physics, University of Modena and Reggio Emilia, via Campi 213,41100 Modena, Italy
Stefano Frabboni
Affiliation:
Department of Physics, University of Modena and Reggio Emilia, via Campi 213,41100 Modena, Italy
Giampiero Ottaviani
Affiliation:
Department of Physics, University of Modena and Reggio Emilia, via Campi 213,41100 Modena, Italy
Ali Shakouri
Affiliation:
Department of Physics, University of Modena and Reggio Emilia, via Campi 213,41100 Modena, Italy
Dario Narducci
Affiliation:
Department of Materials Science, University of Milano-Bicocca, via R. Cozzi 53, 20125 Milano, Italy
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Abstract

Nanostructuring has opened new ways to increase the thermoelectric performance of a host of materials, mainly by decreasing their thermal conductivity κ while preserving the Seebeck coefficient S and electrical conductivity σ. The thermoelectric properties of degenerated polycrystalline silicon films with nanocavities (NCs) have been studied as a function of annealing temperature upon isochronous annealings in argon carried out every 50°C in the range 500 – 1000°C which were used to modify the shape of the NCs. We found that presence of the NCs had no negative effect on the electronic properties of the system. The measured values of S and σ were close to those previously reported for the blank polycrystalline silicon films with the same doping level. The thermal conductivity was also found to be close to the value measured on the blank sample, about half of the reported value in polycrystals. This led to a power factor of 15.2 mWm-1K-2 and a figure of merit of 0.18 at 300 K.

Keywords

thermoelectricSinanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1329: Symposium I – Nanoscale Heat Transfer–Thermoelectrics, Thermophotovoltaics and Emerging Thermal Devices , 2011 , mrss11-1329-i01-09
Copyright
Copyright © Materials Research Society 2011

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