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The Effect of Surface Roughness on Photoluminescence of Porous Silicon

Published online by Cambridge University Press:  17 March 2011

Shunsuke Ogawa ,
Nobutomo Uehara ,
Masato Ohmukai  and
Yasuo Tsutsumi
Shunsuke Ogawa
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan
Nobutomo Uehara
Affiliation:
Graduate school of Engineering, Hokkaido University, Kita-13 Nishi-8 Kita-ku, Sapporo 060-8628, Japan
Masato Ohmukai
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan
Yasuo Tsutsumi
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan
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Abstract

We studied the effect of surface roughness of Si wafers on porous silicon by means of photoluminescence (PL), Fourier transformed infrared (FTIR) absorption and Raman spectroscopy. We prepared several kinds of Si wafers with a different surface roughness, and then the anodization was performed at a same condition. PL spectra show a blue shift with the increase of surface roughness. The particle size of porous silicon nanostructure becomes the smaller with increasing surface roughness at the same time. On the other hand, FTIR absorption spectra show no difference regardless of surface roughness. The PL emission dependent on the surface roughness originates from a quantum size effect. We infer that the surface roughness causes the concentration of the current during anodization in the area where the radius of the curvature at the surface is small.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.28.1
Copyright
Copyright © Materials Research Society 2001

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