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Effect of thermal cycling on performance of Poly(3-hexylthiophene) Transistors

Published online by Cambridge University Press:  15 February 2011

Brian A. Mattis ,
Paul C. Chang  and
Vivek Subramanian
Brian A. Mattis
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley Berkeley, CA 94720, U.S.A.
Paul C. Chang
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley Berkeley, CA 94720, U.S.A.
Vivek Subramanian
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley Berkeley, CA 94720, U.S.A.
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Abstract

We present the results of studies on the electrical and physical modifications to Poly(3-hexylthiophene), upon thermal annealing. Thermally-induced performance modifications and thermal stability of polythiophene thin film transistors are explored. We observe substantial mobility improvements in devices annealed at low temperatures (>80°C), as well as increases in on/off ratios by two orders of magnitude at moderate anneal temperatures (~120°C). We document changes in conductivity, mobility, on current, and on/off ratio with anneal temperature and total thermal budget. In conjunction with material analysis, we develop qualitative models for the mechanisms involved in the annealing/degradation processes. Hence, this study provides a comprehensive analysis of the effect of thermal cycling of polythiophene TFTs on various device performance metrics, and identifies the relevant thermal limits and failure mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 771: Symposium L – Organic and Polymeric Materials and Devices , 2003 , L10.35
Copyright
Copyright © Materials Research Society 2003

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References

]1] Sirringhaus, H., Tessler, N., and Friend, R. H., Science 280, 1741 (1998)Google Scholar
]2] Vaterlein, C., Ziegler, B., Gebauer, W., Neureiter, H., Stoldt, M., Weaver, M., Synthetic Metals 76, 133 (1996)Google Scholar
]3] Brown, A., Jarrett, C., Leeuw, D. and Matters, M., Synthetic Metals 88, 37 (1997)Google Scholar
]4] Liu, Y., Oshima, K., Yamauchi, T., Shimomura, M. and Miyauchi, S., Synthetic Metals 101, 451 (1999)Google Scholar
]5] Yoshino, K., Park, D., Park, B., Onoda, M. and Sugimoto, R., Solid State Comm. 67, 1119 (1988)Google Scholar
]6] Hotta, S. and Ito, K. “Electronic Properties of Polythiophenes.” Denis Fichou, Handbook of Oligo- and Polythiophenes, ed. Fichou, D. (Wiley-vch, 1999) pp. 45–82 Google Scholar
]7] Kilic, G., Toppare, L. and Yurtsever, E.. Synthetic Metals 79, 19 (1996)Google Scholar