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Effective Refractory Metal Alloy Barrier Layer for High Temperature Microelectronic Device Application

Published online by Cambridge University Press:  21 December 2012

A.V. Adedeji*
Affiliation:
Department of Chemistry, Geology & Physics, Elizabeth City State University, 1704 Weeksville Road, Elizabeth City, NC 27909, USA
M.R. Ross
Affiliation:
Department of Chemistry, Geology & Physics, Elizabeth City State University, 1704 Weeksville Road, Elizabeth City, NC 27909, USA
N. Hamden
Affiliation:
Department of Chemistry, Geology & Physics, Elizabeth City State University, 1704 Weeksville Road, Elizabeth City, NC 27909, USA
A.K. Pradhan
Affiliation:
Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, VA 23504, USA
A.C. Ahyi
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849, USA
T. Isaacs-Smith
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849, USA
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Abstract

The oxidation and diffusion of Molybdenum layer sputter-deposited on 2μm CVD diamond grown on silicon substrate has been studied. The Mo layer was protected by refractory metal silicide barrier layer. The samples were annealed in air ambient at 500°C over 30 hours. The oxidation of the samples was monitored with Rutherford Backscattering Spectroscopy (RBS). The effect of reactive sputtering of refractory silicide target in argon-nitrogen gas mixture (5% nitrogen by flow rate) on the barrier characteristics was investigated. The sheet resistivity of the barrier layer on SiC substrates as a function of annealing time in air at 500°C is reported. The surface structure and morphology of the refractory silicide films was determined with X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM).

Type
Articles
Copyright
Copyright © Materials Research Society 2012

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References

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