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Effects of Film Texture on Electromigration Lifetime Predictions

Published online by Cambridge University Press:  15 February 2011

D. B. Knorr  and
K. P. Rodbell
D. B. Knorr
Affiliation:
Materials Engineering Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180–3590.
K. P. Rodbell
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598.
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Abstract

Pure aluminum film was deposited on oxidized silicon to develop three different conditions for study. Grain size and grain size distribution were the same for all cases isolating texture as the major microstructural variable. Electromigration tests were done on 1.8pm thick lines at Ix106 A/cm2 at several temperatures between 150°C and 250°C. Over the entire temperature range a strong (111) texture improves the median time to failure. The applicability of a log normal fit to the failure distribution is questioned because the sites that are susceptible to electromigration damage vary in a statistical fashion, sometimes giving what appears to be a bimodal failure distribution. Activation energy is also a function of texture but depends on the applicability of the log normal failure distribution to give values that can be correlated with transport processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 113
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Vaidya, S. and Sinha, A.K., Thin Solid Films, 75, 253 (1981).Google Scholar
2. Knorr, D.B., Rodbell, K.P., and Tracy, D.P., in Materials Reliability Issues in Microelectronics, edited by Lloyd, J.R., Yost, F.G., and Ho, P.S. (Mater. Res. Soc. Proc. 225, Pittsburgh, PA 1991), pp. 21–2 6.Google Scholar
3. Knorr, D.B., Tracy, D.P., and Rodbell, K.P., Appl. Phys. Lett., 59, 3241 (1991).Google Scholar
4. Knorr, D.B., Tracy, D.P., and Lu, T.-M., in Evolution of Thin Film and Surface Microstructures, edited by Thompson, C.V., Tsao, J.Y., and Srolovitz, D.J. (Mater. Res. Soc. Proc. 202, Pittsburgh, PA 1991) pp.199–204.Google Scholar
5. Knorr, D.B., Tracy, D.P., and Lu, T.-M., Textures and Microstructures, 14–18, 543 (1991).Google Scholar
6. Mei, S.-N. and Lu, T.-M., J. Vac. Sci. Tech. A, 6, 9 (1988).Google Scholar
7. Rodbell, K.P., Knorr, D.B., and Tracy, D.P., this symposium.Google Scholar
8. Attardo, M.J. and Rosenburg, R., J. Appl. Phys., 41, 2381 (1970).Google Scholar
9. Cho, J. and Thompson, C.V., Appl. Phys. Lett., 54, 2577 (1989).Google Scholar
10. Genut, M., Li, Z., Bauer, C.L., Mahajun, S., Tang, P.F., and Milnes, A.G., Appl. Phys. Lett., 58, 2354 (1991).CrossRefGoogle Scholar
11. Sanchez, J.E. Jr., and Morris, J. W. Jr., in Materials Reliability Issues in Microelectronics, edited by Lloyd, J.R., Yost, F.G., and Ho, P.S. (Mater. Res. Soc. Proc. 225, Pittsburgh, PA 1991) pp. 53–5 8.Google Scholar
12. Kauer, I., Gust, W., and Kozma, L., in Handbook of Grain and Interphase Boundary Diffusion Data, Vol.1 (Ziegler, Stuttgart, 1989), pp. 118–143 Google Scholar
13. Turnbull, D. and Hoffman, R.E., Acta Metall., 2, 419 (1954).CrossRefGoogle Scholar
14. Kwok, T. and Ho, P.S., in Diffusion Phenomena in Thin Films and Microelectronic Materials, edited by Gupta, D. and Ho, P.S. (Noyes, Park Ridge, NJ, 1988), p. 369.Google Scholar