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Effects of Growth Sequence on Optical and Structural Properties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

J. D. Song ,
Y. M. Park ,
J. C. Shin ,
J. G. Lim ,
Y. J. Park ,
W. J. Choi ,
I. K. Han ,
W. J. Cho ,
J. I. Lee  and
H. S. Kim
...Show all authors
J. D. Song
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
Y. M. Park
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
J. C. Shin
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
J. G. Lim
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
Y. J. Park
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
W. J. Choi
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
I. K. Han
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
W. J. Cho
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
J. I. Lee
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
H. S. Kim
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Korea
C. G. Park
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Korea
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Abstract

The influence of growth sequence on optical and structural properties of InAs/GaAs quantum dots (QD) grown by atomic layer epitaxy was investigated systematically. It is found that growth interruption (GI) after In is more effective than non-GI after In in reducing the density of coalescent dots, and reducing the dot width distribution of the QDs. Meanwhile, dot densities are approximately doubled by non-GI after In. GI after As reduces dot height distribution compared with non-GI after As. Generally, GI after In plays a more critical role than GI after As does in formation of the QDs. The sample grown with In/GI/As/GI sequence shows the lowest 300 K-photoluminescence (PL) linewidth (∼30 meV), high PL peak separation between ground and 1st excited level (∼80 meV). From the result, it is known that In/GI/As/GI is the favorable growth sequence among the sample sets. Temperature dependence of PL linewidth shows that the In/GI/As/GI sample is insensitive to cryostat temperature and it is attributed to weak wetting effect. Thinner wetting layers shown in a cross-sectional TEM image supports this.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T3.26
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Ledentsov, N. N., Semiconductors 33, 946 (1999) and references in it.Google Scholar
2. Bimberg, D., Grundmann, M., and Ledentsov, N. N., “Quantum Dot Heterostructures”, (JOHN WILEY & SONS, New York, 1999), and references in it.Google Scholar
3. Sanguinetti, S., Mano, T., Oshima, M., Tateno, T., Wakaki, M., and Koguchi, N., Appl. Phys. Lett. 81, 3067 (2002).Google Scholar
4. Tsyrkin, G‥ È., Golubok, A. O., Tipisev, S. Ya., and Ledentsov, N. N., Semiconductors 29, 884 (1995).Google Scholar
5. Bosacchi, A., Frigeri, P., Franchi, S., Allegri, P. and Avanzini, V., J. Cryst. Growth 175/176, 771 (1997).Google Scholar
6. Mukai, K., Ohtsuka, N., Sugawara, M., and Yamazaki, S., Jpn. J. Appl. Phys. 33, L1710 (1994).Google Scholar
7. Guryanov, G. M., et al., Surf. Sci. 352–354, 651 (1996).Google Scholar