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Effects of growth temperature on structural properties of ZnO thin films

Published online by Cambridge University Press:  01 February 2011

Kwang-Sik Kim ,
Jung-Ho Lee  and
Hyoun-Woo Kim
Kwang-Sik Kim
Affiliation:
School of Materials Science and Engineering, In-ha University, #253, Yonghyun-Dong, Nam-Gu, Incheon 402-751, Korea.
Jung-Ho Lee
Affiliation:
School of Materials Science and Engineering, In-ha University, #253, Yonghyun-Dong, Nam-Gu, Incheon 402-751, Korea.
Hyoun-Woo Kim
Affiliation:
School of Materials Science and Engineering, In-ha University, #253, Yonghyun-Dong, Nam-Gu, Incheon 402-751, Korea.
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Abstract

Highly-oriented ZnO thin films have been successfully deposited on (100)Si by metal organic chemical vapor deposition (MOCVD) at 250°C∼400°C. We report on the structural properties of ZnO thin film at various temperatures. The crystallinity of thin films improved and the surface smoothness decreased with increasing growth temperature. In x-ray reflection analysis with respect to ZnO (0002) peak, the full width at half maximum (FWHM) of 0.4°was achieved at 400°.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K7.16
Copyright
Copyright © Materials Research Society 2002

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