Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-19T03:13:50.132Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effects of Plasma Immersion Ion Implantation on Thermal Hillock Formation

Published online by Cambridge University Press:  15 February 2011

Carey A. Pico ,
Jiang Tao  and
Nathan Cheung
Carey A. Pico
Affiliation:
Dept. of Electrical Engineering and Computer Sciences, Cory Hall University of California-Berkeley, Berkeley, CA 94720
Jiang Tao
Affiliation:
Dept. of Electrical Engineering and Computer Sciences, Cory Hall University of California-Berkeley, Berkeley, CA 94720
Nathan Cheung
Affiliation:
Dept. of Electrical Engineering and Computer Sciences, Cory Hall University of California-Berkeley, Berkeley, CA 94720
Get access

Abstract

The effect of shallow (< 500 Å) implanted ions on the formation of thermal hillocks in thin (5000 Å) patterned Al9 9w%Si1w%, films was studied. The ions were implanted by plasma immersion ion implantation (PIII) and the gases (N2, O2, and Ar) used in the implantation ranged from completely inert to highly reactive with Al. The voltages used to accelerate the ionized molecules were 2.5 kV to 30 kV. This corresponds to implant depths of 50 Å to 400 Å. The nominal doses were adjusted to achieve a ∼20% dopant concentration over the fullwidth- at-half-maximum of the calculated implant profile. Following implant, the samples were sintered at 450°C for 30 minutes and inspected for thermal hillock formation by scanning electron microscopy. We find that PIII is effective in suppressing thermal hillock formation for implant depths greater than 60 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 113
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) McPhereson, J.W. and Dunn, C.F., J. Vac. Sci. Tech. B5, 1321, 1987 Google Scholar
2) Hinode, K., Owada, N., Nishida, T., and Mukai, K., J. Vac. Sci. Tech. B5, 518, 1987 Google Scholar
3) Peacock, N., Thin Sol. Films 156, 173, 1988 Google Scholar
4) MacWilliam, K.P., Lowry, L.E., Isaac, M., Cobert, D., and Zietlow, T.C., “Improved Yield and Reliability Through Fluorine Incorporation”, IEEE Symp. on VLSI Tech., p.33, 1990 Google Scholar
5) Hershkovitz, M., Blech, I.A., and Komem, Y., Thin Solid Films 130, 87, 1985 Google Scholar
6) Pico, C.A. and Bonifield, T.D., Proc. 8th IEEE VLSI Multilevel Interconnect Conf. (Santa Clara, CA), p. 256, 1991.Google Scholar
7) Pico, C.A. and Bonifield, T.D., “Hillocks on Half-Micron Al Lines”, J. Mat. Res., (accepted)Google Scholar
8) Conrad, J.R., Radtke, J.L., Dodd, R.A., Worzala, F.J., and Tran, N.C., J. Appl. Phys. 62, 4591, 1987 Google Scholar
9) Tendys, J., Donnelly, I.J., Kenny, M.J., and Pollock, J.T.A., Appl. Phys. Lett. 53, 2143, 1988 Google Scholar
10) Stewart, R.A. (private communication)Google Scholar
11) Jackson, M.S. and Li, C.Y., Acta Metall. 30, 1993, 1982 Google Scholar