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Effects of Plasma Surface Treatment on the Self-forming Barrier Process in Porous SiOCH

Published online by Cambridge University Press:  01 February 2011

Junichi Koike ,
Junichi Koike  and
Zsolt Tökei
Junichi Koike
Affiliation:
koikej@material.tohoku.ac.jp, Tohoku University, Dept. of Materials Science, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan, +81-22-795-7360, +81-22-795-7360
Junichi Koike
Affiliation:
koikej@material.tohoku.ac.jp, Tohoku University, Dept. of Materials Science, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan,
Zsolt Tökei
Affiliation:
zsolt@imec.be, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

Self-forming barrier process was carried out on a porous low-k material with the Cu-Mn alloys. The effects of various surface treatments were investigated in the sample having a pore size of 0.9 nm and a porosity of 25%. Before and after annealing, samples were analyzed in cross section with transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDS). Concentration profile was also analyzed with time-of-flight secondary ion mass spectroscopy (ToF-SIMS). The results indicated the penetration of Cu into the low-k interior during deposition, followed by the segregation of Cu at the low-k/Si interface during subsequent annealing. Although a diffusion barrier layer was formed and no further Cu penetration was not observed during annealing, initial Cu penetration in the deposition process was detrimental and should be prevented by restoring the plasma damage on the low-k surface.

Keywords

barrier layerdielectric propertiesdiffusion
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N03-10
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Lau, W. S., Tan, H. J., Chen, Z., Li, C. Y., Vacuum 81, 1040 (2007).Google Scholar
2. Shamiryan, D., Abell, T., Iacopi, F. and Maex, K., Mater. Today, Jan. 35 (2004).Google Scholar
3. Usui, T. and Shibata, H., Nikkei Microdevices 254, 79 (2006).Google Scholar
4. Koike, J., Wada, M., Appl. Phys. Lett. 87, 041911 (2005).Google Scholar
5. Haneda, M., Iijima, J. and Koike, J., Appl. Phys. Lett. 90, 252107 (2007).Google Scholar
6. Koike, J. et al, J. Appl. Phys. 102, 043527 (2007).Google Scholar
7. Urbanowicz, A.M., Baklanov, M.R., Heilen, J., Travaly, Y., Cockburn, A., Electrochemical and Solid-State Lett. 10(10), G76–G79 (2007).Google Scholar
8. Travaly, Y., Eyckens, B., Carbonel, L. et al, Microelec. Eng. 64, 367 (2002).Google Scholar
9. Puyrenier, W., Rouessac, V., Broussous, L., Rebiscoul, D., Ayral, A., Microporous & Mesoporous Mater. 106, 40 (2007).Google Scholar