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Electrical and Optical Properties of Permalloy Oxide grown by dual ion beam sputtering.

Published online by Cambridge University Press:  26 June 2014

Maclyn Stuart Compton
Affiliation:
Department of Physics, Texas State University, San Marcos.
Nelson A. Simpson
Affiliation:
Department of Physics, Texas State University, San Marcos.
Elizabeth G. LeBlanc
Affiliation:
Department of Physics, Texas State University, San Marcos.
Michael A. Robinson
Affiliation:
Department of Electrical Engineering, Texas State University, San Marcos.
Wilhelmus J. Geerts
Affiliation:
Department of Physics, Texas State University, San Marcos.
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Abstract

Electrical and Optical measurements were carried out on permalloy oxide (PyO) thin films made by reactive dual ion beam sputtering at room temperature. VSM measurements at room temperature and 15 Kelvin did not reveal any magnetic moment in 120 nm thick films. The optical refraction and extinction spectra from 200-1000 nm were determined from ellipsometry measurements using a Cody-Lorentz model and provided in a reproducible method to determine the film thickness of PyO films on different substrate materials. PyO is transparent above 700 nm and is strongly absorbing below 500 nm. The resistivity values of PyO samples sputtered at room temperature depend on the oxygen flow rate and is approximately 4E3 Ohm cm for films prepared at 10 sccm. The resistivity of PyO decreases as a function of temperature. The dielectric constant is strongly frequency dependent, decreasing from 500 at 500 Hz to 10 at 1 MHz.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Mihajlovic, Goran, Schreiber, Daniel K., Liu, Yuzi, Pearson, John E., Bader, Samuel D., Petford-Long, Amanda K., and Hoffmann, Axel, Appl. Phys. Lett. 97, 112502 (2010).CrossRefGoogle Scholar
Du, Chun, Yang, Xiaogang, Mayer, Matthew T., Hoyt, Henry, Xie, Jin, McMahon, Gregory, Bischoping, Gregory, and Wang, Dunwei, Angewandte Communications 52 Pages 12692-12695 (2013)Google Scholar
Rios, Steven E., Bandyopadhyay, Anup K., Smith, Casey, Gutierrez, Carlos J., J. of Magn. Magn. Mat. 286 Pages 455-462 (2003)CrossRefGoogle Scholar
Bandyopadhyay, Anup K., Rios, Steven E., Tijerina, Alber, Gutierrez, Carlos J., J. Alloys Comp. 369 217221 (2004)CrossRefGoogle Scholar
Herzinger, C. M. Johss, B., McGahan, W.A., Woollam, J.A., Paulson, W., J. Appl. Phys. 83, 3323 (1998).CrossRefGoogle Scholar
Tran, Fabien, Blaha, Peter, Phys. Rev. Lett. 102 226401 (2009).CrossRefGoogle Scholar
Dubois, E., Chevalet, J., Langmuir 19, 1089210900 (2003).CrossRefGoogle Scholar
Schroder, Dieter K., Semiconductor Material and Device Characterization , 3 rd ed., Wiley (2006).Google Scholar
Rao, K.V., Smakula, A., J. Appl. Phys. 36 20312038 (1965).CrossRefGoogle Scholar
Mott, N.F. and Davis, E.A., “Electronic Processes in Non-Crystalline Materials,” Second Edition. Oxford University Press (1979) Google Scholar