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Electrical and Structural Properties of Annealed Epitaxial Ceo2 Films on Si(111) Substrates

Published online by Cambridge University Press:  15 February 2011

A. H. Morshed ,
M. Tomita ,
N. El-Masry ,
P. Mclarty ,
N. P. Parikh  and
S. M. Bedair
A. H. Morshed
Affiliation:
Electrical and Computer Engineering Dept., North Carolina State University, Box 7911, NCSU, Raleigh NC 27695–7911
M. Tomita
Affiliation:
Electrical and Computer Engineering Dept., North Carolina State University, Box 7911, NCSU, Raleigh NC 27695–7911
N. El-Masry
Affiliation:
Electrical and Computer Engineering Dept., North Carolina State University, Box 7911, NCSU, Raleigh NC 27695–7911
P. Mclarty
Affiliation:
Electrical and Computer Engineering Dept., North Carolina State University, Box 7911, NCSU, Raleigh NC 27695–7911
N. P. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Box 3255, Chapel Hill, NC 27509–3255
S. M. Bedair
Affiliation:
Electrical and Computer Engineering Dept., North Carolina State University, Box 7911, NCSU, Raleigh NC 27695–7911
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Abstract

Epitaxial CeO2 films were grown on Si(111) substrates by laser ablation of CeO2 targets under UHV conditions. The as-grown films were found to have poor electrical properties due to the presence of a large amount of defects near the oxide-silicon interface. Improved MOS electrical characteristics were obtained by annealing in an O2 environment. This however resulted in the growth of a SiO2 layer that can be 10 nm thick at the silicon interface which will thus reduce the capacitance of the grown structure. Annealing in argon and argon followed by oxygen environments were investigated as means to reduce the defects while minimizing the intermediate SiO2 layer thickness. The annealed films were compared based on their RBS yields, breakdown voltages and capacitance-voltage characteristics. Growth and annealing conditions were optimized to achieve device quality MOS structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 121
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Inoue, T., Osonoe, M., Tohda, H., Hiramatsu, M., Yamamoto, Y., Yamanaka, A. and Nakayama, T., J. Appl. Phys. 69, 8313 (1991).Google Scholar
2. Chikyow, T., Tye, L., El-Masry, N. and Bedair, S., Appl. Phys. Lett. 65, 1030 (1994)Google Scholar
3. Tye, L., Chikyow, T, El-Masry, N. and Bedair, S. in Epitaxial Oxide Thin Films and Heterostrucutres, Edited by Fork, D. K., Philips, J. M., Ramesh, R. and Wolf, R. M. (Mater. Res. Soc. Proc. 341, San Francisco, CA 1994) pp.107–112.Google Scholar
4. Tye, L., El-Masry, N., Chikyow, T., McLarty, P. and Bedair, S., Appl. Phys. Lett. 65, 3081 (1994).Google Scholar
5. Tuller, H. L. and Nowick, A. S., J. Electrochem. Soc. 126, 209 (1979).Google Scholar