Hostname: page-component-7c8c6479df-27gpq Total loading time: 0 Render date: 2024-03-17T22:43:49.413Z Has data issue: false hasContentIssue false

Electrical Characterization of Vacuum Deposited and Solution Processed DH4T Thin Film Transistors

Published online by Cambridge University Press:  15 February 2011

Tobias Muck
Affiliation:
Experimentelle Physik III, Physikalisches Institut, Universität Würzburg 97074 Würzburg, Germany
Michael Leufgen
Affiliation:
Experimentelle Physik III, Physikalisches Institut, Universität Würzburg 97074 Würzburg, Germany
Amira Lebib
Affiliation:
Experimentelle Physik III, Physikalisches Institut, Universität Würzburg 97074 Würzburg, Germany
Tanja Borzenko
Affiliation:
Experimentelle Physik III, Physikalisches Institut, Universität Würzburg 97074 Würzburg, Germany
Jean Geurts
Affiliation:
Experimentelle Physik III, Physikalisches Institut, Universität Würzburg 97074 Würzburg, Germany
Georg Schmidt
Affiliation:
Experimentelle Physik III, Physikalisches Institut, Universität Würzburg 97074 Würzburg, Germany
Laurens W. Molenkamp
Affiliation:
Experimentelle Physik III, Physikalisches Institut, Universität Würzburg 97074 Würzburg, Germany
Veit Wagner
Affiliation:
School of Engineering and Science, International University Bremen 28759 Bremen, Germany
Henrique L. Gomes
Affiliation:
Universidade de Algarve, Campus de Gambelas, FCT, 8000 Faro, Portugal
Get access

Abstract

We present organic field-effect transistors with dihexylquaterthiophene (DH4T) as active material, a derivative of the oligothiophene á-4T with two hexyl chains as end groups. This substitution makes this molecule suitable not only for vacuum sublimation but also for solution processing which enables cheaper production. Additionally, the layer ordering is improved. We compare vacuum deposited and solution processed OFETs based on DH4T. The former ones show nearly ideal I-V characteristics. The latter ones show deviations from ideal behavior and lower currents. Furthermore, temperature dependent measurements of drain-source current in vacuum deposited DH4T-OFETs shows an unusual variation of the OFET apparent mobility. These apparent changes in mobility are caused by a threshold voltage shift, which becomes pronounced at around 290 K

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Horowitz, G., Hajlaoui, R. and Delannoy, P., J. Phys. III France 5 355371 (1995)Google Scholar
2. Yamamoto, T., Kanbara, T. and Mori, C., Synth. Met., 38 399 (1990)Google Scholar
3. Garnier, F., Yassar, A., Hajlaoui, R. et al., J. Am. Chem. Soc. 115 87168721 (1993)Google Scholar
4. Wegewijs, B., De Haas, M. P., Leeuw, D. M. De, Wilson, R. and Sirringhaus, H., Synth. Met. 101 534535 (1999)Google Scholar
5. Akimichi, H., Waragai, K., Hotta, S., Kano, H., and Sakiki, H., Appl. Phys. Lett. 58 15001503 (1990)Google Scholar
6. , Sze, Semiconductor Devices: Physics and Technology, (John Wiley and Sons Ltd, 1985)Google Scholar
7. Matters, M., De, D.M. Leeuw, Herwig, P.T., and Brown, A.R., Synth. Met. 102 998999 (1999)Google Scholar