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Electrical Properties of Oxide-Nitride-Oxide, Ono, Heterostructures Fabricated by Low Temperature Remote PECVD

Published online by Cambridge University Press:  22 February 2011

Y. Ma ,
T. Yasuda ,
Y. L. Chen ,
G. Lucovsky  and
D. M. Maher
Y. Ma
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC, 27695–8202
T. Yasuda
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC, 27695–8202
Y. L. Chen
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC, 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC, 27695–8202
D. M. Maher
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC, 27695–8202
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Abstract

Oxide-Nitride-Oxide, ONO, heterostructures, fabricated by low-temperature, 300°C, Remote Plasma Enhanced Chemical Vapor Deposition, have been used as gate dielectrics in metal insulator semiconductor devices. Analysis of C-V data for this devices indicates that higher levels of fixed charge are associated with the internal dielectric interfaces. A high-temperature, ̃900°C, Rapid Thermal Annealing, RTA, step has been inserted into the process sequence for fabricating ultra-thin, 4.7 nm SiO2 equivalent, device-quality ONO dielectric layers. The electrical properties of these ONO dielectrics, including the Si/SiO2 interfacial trap density, the flat band voltage, the charge to breakdown and the reliability under electron injection are comparable to those of high temperature, thermally-grown oxides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 147
Copyright
Copyright © Materials Research Society 1993

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References

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