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Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells

Published online by Cambridge University Press:  21 March 2011

A. Hangleiter ,
S. Lahmann ,
C. Netzel ,
U. Rossow ,
P. R. C. Kent  and
A. Zunger
A. Hangleiter
Affiliation:
Institut für Technische Physik, Technische Universität Braunschweig, Mendelssohnstr. 2, D-38106 Braunschweig, Germany
S. Lahmann
Affiliation:
Institut für Technische Physik, Technische Universität Braunschweig, Mendelssohnstr. 2, D-38106 Braunschweig, Germany
C. Netzel
Affiliation:
Institut für Technische Physik, Technische Universität Braunschweig, Mendelssohnstr. 2, D-38106 Braunschweig, Germany
U. Rossow
Affiliation:
Institut für Technische Physik, Technische Universität Braunschweig, Mendelssohnstr. 2, D-38106 Braunschweig, Germany
P. R. C. Kent
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401-3393, U.S.A. E-mail: a.hangleiter@tu-bs.de
A. Zunger
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401-3393, U.S.A. E-mail: a.hangleiter@tu-bs.de
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Abstract

We show that the strong bowing of the bandgap of GaInN, which is primarily due to bowing of the valence band edge, translates into a strongly composition dependent ratio of the conduction band offset to the valence band offset with respect to GaN. For common In mole fractions of 0-20 % this leads to a reversal of the band offset ratio and to very weak electron con nement. This theoretical picture is veri ed by comparing results of time-resolved spectroscopy on asymmetric AlGaN/GaInN/GaN and AlGaN/GaN/AlGaN quantum wells. Since electron con nement is much stronger for GaN/AlGaN wells than for GaInN/GaN wells, the effect of asymmetry is very weak for the former and fairly strong for the latter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I7.2.1
Copyright
Copyright © Materials Research Society 2002

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