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Electron Beam Excited Plasma CVD for Silicon Growth

Published online by Cambridge University Press:  09 August 2011

K. Okitsu'l ,
M. Imaizumi ,
T. Ito ,
K. Yamaguchi ,
M. Yamaguchi ,
T. Hara ,
M. Ban ,
M. Tokai  and
K. Kawamura
K. Okitsu'l
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468, Japan
M. Imaizumi
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468, Japan
T. Ito
Affiliation:
Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-11, Japan
K. Yamaguchi
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468, Japan
M. Yamaguchi
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468, Japan
T. Hara
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468, Japan
M. Ban
Affiliation:
Kawasaki Heavy Industries Inc., 118 Futatsuzuka, Noda, Chiba 278, Japan
M. Tokai
Affiliation:
Kawasaki Heavy Industries Inc., 118 Futatsuzuka, Noda, Chiba 278, Japan
K. Kawamura
Affiliation:
Chubu Electric Power Co., Inc., 20-1 Kitasekiyama, Ohdaka, Midori-ku, Nagoya 459, Japan, oki2@toyota-ti.ac.jp
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Abstract

Electron beam excited plasma (EBEP) CVD is a novel fabrication route for poly Si. Deposition was carried out on Si and SiO2 layer from pure SiH4 without hydrogen dilution. Crystalline silicon (μc-Si:H) films were made with electron acceleration voltage, discharge current, source gas flow rate, chamber presser, substrate temperature varied systematically. Average grain size was about 10 nm. Crystalline ratio was up to 0.7 at the maximum. The films contain about 19 at% hydrogen in spite of no dilution. It is considered that EBEP supplies much about atomic hydrogen due to the high decomposability of the source gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 539
Copyright
Copyright © Materials Research Society 1999

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References

[1] Rostalsky, M., Kunze, T., Linke, N. and Muller, J., IEEE P.V. Specialists Conference 1997, 743 (1997)Google Scholar
[2] Hara, T., Hamagaki, M., Sanda, A., Aoyagi, Y., Namba, S., J. Vac. Sci. Technol. B 5, 366 (1987).Google Scholar
[3] Ohgo, T., Hara, T., Hamagaki, M., Ishii, K., Otsuka, M., J. Appl. Phys. 70, 4050 (1991).Google Scholar
[4] Ito, T., Konomi, I., Okitsu, K., Imaizumi, M., Yamaguchi, K., Yamaguchi, M., Hara, T., Ban, M., Tokai, M., Kawamura, K., 2ed World Conf. and Exhibi. on PV Solar Energy Conversion (1998).Google Scholar
[5] Hamagaki, M., Hara, T., Sadamoto, Y., and Ohgo, T., Rev. Sci. Instrum. 66, 3469 (1995)Google Scholar
[6] Sui, Z., Leong, P. P., Herman, I. P., Higashi, G. S., Temkin, H., Appl. Phys. Lett. 60, 2086 (1992).Google Scholar