Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-24T23:31:21.298Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic and Optical Properties of A—(Si, Ge):H Alloys

Published online by Cambridge University Press:  28 February 2011

Vikram Daial ,
James F. Booker  and
Mark Leonard
Vikram Daial
Affiliation:
Spire Corporation Patriots Park Bedford, MA 01730
James F. Booker
Affiliation:
Spire Corporation Patriots Park Bedford, MA 01730
Mark Leonard
Affiliation:
Spire Corporation Patriots Park Bedford, MA 01730
Get access

Abstract

We describe the preparation and electronic and optical properties of amorphous (Si, Ge) alloys. A—(Si, Ge):H alloys were prepared by glow discharge decomposition of SiH4 and GeH4. The bandgap was varied between 1.78 and 1.42 eV by changing the GeH4:SiH4 ratio in the gas phase. We find a distinct influence of growth temperature on electronic properties. Films grown at low temperatures (200–250C) tendto have much lower photo conductivity than films grown at higher temperatures (300–325C). The electron (μ τ) products of high temperature films are general> 1X10–7 cm2/V. We also obtain very sharp valence band tails in a—(Si, Ge):H alloys, with slopes of ∼ 40 meV. The hole (μ τ) product is generally ∼1–2X10–8 cm2/V. All these properties suffer a catastrophic decline when bandgap is reduced below about 1.5 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 145
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Chevallier, J., Wieder, H., Onton, A. and Guarnieri, C.R., Solid State Comm. 24, 867 (1977)Google Scholar
2. Marfaing, Y., 2nd European Photovoltaic Energy Conf. (Berlin, 1979) p. 287 Google Scholar
3. Dalal, V.L. and Fagen, E.A., Proc. 14th IEEE Photovolt. Conf. (San Diego, CA, 1980) p. 1066 Google Scholar
4. Dalal, V.L., Proc. 17th IEEE Photovolt. Conf. (Orlando, FLa., 1984) p. 86 Google Scholar
5. Dalal, V.L., Fortmann, C.M. and Eser, E., AIP Proc. #73, p. 15 (1981)Google Scholar
6. Nakamura, G., Sato, K., Yukimoto, Y., Proc. 15th IEEE Photovolt. Conf. (San Diego, CA, 1982) p. 1331 Google Scholar
7. Nakamura, G. et al. J. Non-Cryst. Solids, 59–60, 1111 (1983)CrossRefGoogle Scholar
8. Nakamura, G. et al. Proc. of 3rd European PV Solar Energy Conf. (Cannes, France, 1980) p. 835 Google Scholar
9. Vanier, P.E., Delahoy, A.E. and Griffith, R.W., Proc. AlP Conf. #73, (Carefree, AZ, 1981) p. 227 Google Scholar
10. Paul, W. & McKenzie, J., Phys. Rev. B, (Feb. 15, 1985)Google Scholar
11. Dalal, V. & Alvarez, F., J. de Physique 42, C-4, 491 (1981)Google Scholar
12. Cody, G., in “Semiconductors and Semimetals”, Ed. Pankove, J. 21B, 11 (1984) (Academic Press, NY)Google Scholar
13. Cody, G. et al. J. de Physique 42, C-4, 301 (1981)Google Scholar