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    Iagallo, Andrea Tanabe, Shinichi Roddaro, Stefano Takamura, Makoto Sekine, Yoshiaki Hibino, Hiroki Miseikis, Vaidotas Coletti, Camilla Piazza, Vincenzo Beltram, Fabio and Heun, Stefan 2015. Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene. Semiconductor Science and Technology, Vol. 30, Issue. 5, p. 055007.


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  • MRS Proceedings, Volume 1283
  • January 2011, mrsf10-1283-b09-02

Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC

  • Shinichi Tanabe (a1), Yoshiaki Sekine (a1), Hiroyuki Kageshima (a1), Masao Nagase (a1) and Hiroki Hibino (a1)
  • DOI: http://dx.doi.org/10.1557/opl.2011.675
  • Published online: 31 March 2011
Abstract
ABSTRACT

We studied the electronic transport properties of monolayer and bilayer graphene in top-gated geometries. Monolayer and bilayer graphene were epitaxially grown by thermal decomposition of SiC. The half-integer quantum Hall effect under the gated environment was observed in monolayer graphene devices. The mobility of the monolayer and bilayer graphene devices showed distinct characteristics as a function of carrier density, which reflect their electronic structures. Strong temperature dependence at the charge neutrality point was observed in bilayer graphene devices, suggesting band gap opening.

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