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Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC

  • Shinichi Tanabe (a1), Yoshiaki Sekine (a1), Hiroyuki Kageshima (a1), Masao Nagase (a1) and Hiroki Hibino (a1)...
Abstract
ABSTRACT

We studied the electronic transport properties of monolayer and bilayer graphene in top-gated geometries. Monolayer and bilayer graphene were epitaxially grown by thermal decomposition of SiC. The half-integer quantum Hall effect under the gated environment was observed in monolayer graphene devices. The mobility of the monolayer and bilayer graphene devices showed distinct characteristics as a function of carrier density, which reflect their electronic structures. Strong temperature dependence at the charge neutrality point was observed in bilayer graphene devices, suggesting band gap opening.

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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