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Enhanced Blue Light Emission From Sexiphenyl Heterostructure EL Device

Published online by Cambridge University Press:  21 March 2011

Yutaka Ohmori ,
Takahisa Tsukagawa  and
Hirotake Kajii
Yutaka Ohmori
Affiliation:
Osaka University, Collaborative Research Center for Advanced Science and Technology (CRCAST) 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
Takahisa Tsukagawa
Affiliation:
Osaka University, Collaborative Research Center for Advanced Science and Technology (CRCAST) 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
Hirotake Kajii
Affiliation:
Osaka University, Collaborative Research Center for Advanced Science and Technology (CRCAST) 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Abstract

Enhanced electroluminescence (EL) from vapor deposited p-sexiphenyl (6p) layer has been observed utilizing heterostructure of p-sexiphenyl emissive layer and N,N'-diphenyl-N,N'-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) hole transporting layer. The EL device consists of an indium-tin oxide (ITO) anode, a hole transporting layer, an emissive layer, and a magnesium containing silver cathode. A heterostructure device with 50 nm-thick p-sexiphenyl and 60 nm-thick TPD shows the enhanced emission from the p-sexiphenyl emissive layer. The electroluminescence from the device shows the emission peak centered at 420 nm. The p-sexiphenyl/TPD heterostructure device emits 2 orders of magnitude higher intensity than the conventional single layer of p-sexiphenyl device. The mechanism of enhanced emission from the heterostructure device has been discussed utilizing energy band diagrams of these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 660: Symposia JJ – Organic Electronic & Photonic Materials and Devices , 2000 , JJ5.28
Copyright
Copyright © Materials Research Society 2001

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References

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