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Enhancement in Thermoelectric Figure-of-merit of n-type Si-Ge Alloy Synthesized Employing High Energy Ball Milling and Spark Plasma Sintering

Published online by Cambridge University Press:  25 January 2013

Sivaiah Bathula ,
M. Jayasimhadri ,
Ajay Dhar ,
M. Saravanan ,
D. K. Misra ,
Nidhi Singh ,
A. K. Srivastava  and
R. C. Budhani
Sivaiah Bathula
Affiliation:
CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi -110012, India Department of Applied Physics, Delhi Technological University, Delhi, India
M. Jayasimhadri
Affiliation:
Department of Applied Physics, Delhi Technological University, Delhi, India
Ajay Dhar*
Affiliation:
CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi -110012, India
M. Saravanan
Affiliation:
CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi -110012, India
D. K. Misra
Affiliation:
CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi -110012, India
Nidhi Singh
Affiliation:
CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi -110012, India
A. K. Srivastava
Affiliation:
CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi -110012, India
R. C. Budhani
Affiliation:
CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi -110012, India
*
*Corresponding author: adhar@nplindia.org, rcb@nplindia.org Tel.: +91-11- 4560 9455, Fax.: +91-11-45609310
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Abstract

In the present study, we report the enhancement in figure-of-merit (ZT) of nanostructured n-type Silicon-Germanium (Si80Ge20) thermoelectric alloy synthesized using high energy ball milling followed by spark plasma sintering (SPS). After 90 h of ball milling of elemental powders of Si, Ge and P (2 at.%), a complete dissolution of Ge in Si matrix has been observed forming the nanostructured n-type Si80Ge20 alloy powder. X-ray diffraction analysis (XRD) confirmed the crystallite size of the host matrix (Si) to be ∼7 nm and also indicated the formation of an additional phase of SiP nano-precipitates after SPS. HR-TEM analysis revealed that the nano-grained network was retained post-sintering with a crystallite size of size of 9 nm and also confirmed the SiP precipitates formation with a size of 4 to 6 nm. As a result, a very low thermal conductivity of ∼2.3W/mK at 900°C has been observed for Si80Ge20 alloy primarily due to scattering of phonons by nanostructured grains and nano-scaled SiP precipitates which further contribute to this scattering mechanism. Electrical conductivity values of SiGe sintered alloy are slightly lower to that of reported values in literature. This was attributed to the formation of SiP which creates a compositional difference between the grain boundary region and the grain region, leading to a chemical potential difference at interface and the grain region. Figure-of-merit (ZT) of n-type Si80Ge20 nanostructured alloy was found to be ≈1.5 at 900°C, which is the highest reported so far at this temperature.

Keywords

mechanical alloyingthermoelectricnanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1490: Symposium B – Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration , 2013 , pp. 51 - 56
Copyright
Copyright © Materials Research Society 2013 

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