Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-25T14:26:05.253Z Has data issue: false hasContentIssue false

Epitaxial Growth And Optical Properties of Sol-Gel (Pb,La)Ti03 Thin Films for Waveguides

Published online by Cambridge University Press:  15 February 2011

Junmo Koo
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology(KAIST), Taejon, 305–701, Korea, bsbae@sorak.kaist.ac.kr
Changho Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology(KAIST), Taejon, 305–701, Korea, bsbae@sorak.kaist.ac.kr
Kwangsoo No
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology(KAIST), Taejon, 305–701, Korea, bsbae@sorak.kaist.ac.kr
Byeong-Soo Bae
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology(KAIST), Taejon, 305–701, Korea, bsbae@sorak.kaist.ac.kr
Get access

Abstract

Lead lanthanum titanate thin films have been prepared on MgO and sapphire substrates by sol-gel method. XRD analyses confirm that the PLT films fabricated on MgO(lOO) and c-plane sapphire substrates grow preferentially with (100) and (111) orientations, respectively. The PLT films with a high La content have a low refractive index due to the decrease of the refractive index anisotropy. The propagation losses in PLT films measured, using He-Ne laser light and the prism coupling method decrease as the La content increases. This is due to the reduction of the refractive index anisotropy and the surface scattering by the surface roughness as a function of La content in the film.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Adachi, H. and Wasa, K., IEEE Trans. Ultrason. Ferroelectr. Freq. Control 38, p. 645 (1991).Google Scholar
2. Wegner, A. B., Braeck, S. R. J. and Wu, A. Y., Ferroelectrics 116, p. 195 (1991).Google Scholar
3. Teowee, G., Ph.D. Thesis, The University of Arizona, 1992.Google Scholar
4. Ramamurthi, S. D., Swartz, S. L., Marken, K. R., Busch, J. R. and Wood, V. E., (Mater. Res. Soc. Proc. 271, Pittsburgh, PA 1992), pp. 351357.Google Scholar
5. Takayama, R., Tornita, Y., Iijima, K. and Ueda, I., Ferroelectrics, 118, p. 325 (1991).Google Scholar