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Epitaxial Growth of Ba1−xSrxTiO3 Thin Films on YBa2Cu3O7−x Electrode by PE-MOCVD

Published online by Cambridge University Press:  15 February 2011

C.S. Chern
Affiliation:
EMCORE Corporation, 35 Elizabeth Ave, Somerset, NJ 08873
S. Liang
Affiliation:
EMCORE Corporation, 35 Elizabeth Ave, Somerset, NJ 08873
Z.Q. Shi
Affiliation:
EMCORE Corporation, 35 Elizabeth Ave, Somerset, NJ 08873
S. Yoon
Affiliation:
Dept. of Ceramic Engineering, Rutgers University, Piscataway, NJ 08854
A. Safari
Affiliation:
Dept. of Ceramic Engineering, Rutgers University, Piscataway, NJ 08854
P. Lu
Affiliation:
Dept. of Materials Science & Engineering, Rutgers University., Piscataway, NJ 08854
B.H. Kear
Affiliation:
Dept. of Materials Science & Engineering, Rutgers University., Piscataway, NJ 08854
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Abstract

Plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) has been successfully employed for the deposition of (100) oriented barium strontium titanate (BST) thin films on a variety of substrate and electrode materials. The incorporation of O2 plasma, which was used as oxidation reactant, has helped to reduce the required temperature for deposition of high-quality STO and BST thin films. This low temperature processing may make it possible to integrate BST on Si and GaAs. BST films with low leakage current densities of about 10−7 A/cm2 at 2-volt (about 105 V/cm) operation were obtained from PE-MOCVD processing. Moreover, the BST results of capacitance-temperature (C-T) measurements show that most of the PE-MOCVD BST films have Curie temperatures of about 30–35°C and a peak dielectric constant of 600–800 at zero bias voltage, The sharp transition in the C-T data indicates that the BST films may have a high induced pyroelectric coefficient at room temperature, which is highly desirable for uncooled IR imaging arrays. The x-ray diffraction and Rutherford backscattering spectrometry results show that the BST film composition reproducibility was well controlled at around Ba0.75Sr0.25TiO3 with a 4% variation. Device quality BST thin films with the thickness of 1000–2000 Å were produced. These results indicate that PE-MOCVD has high potential to be further developed and promoted as a production deposition technique providing high permittivity dielectric thin films for microelectronics and IR sensor industries.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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