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Epitaxial Growth of Fe3Si Thin Films on (100) Magnesia Substrates

Published online by Cambridge University Press:  26 February 2011

Kensuke Akiyama
Affiliation:
akiyama@kanagawa-iri.go.jp, Kanagawa Industrial Technology Center, Electronics, 705-1 Shimoimaizumi, Ebina, 243-0435, Japan, +81-46-236-1500, +81-46-236-1525
Satoru Kaneko
Affiliation:
satoru@kanagawa-iri.go.jp, Kanagawa Industrial Technology Center, Electronics, 705-1 Shimoimaizumi, Ebina, 243-0435, Japan
Teiko Kadowaki
Affiliation:
t-kadowaki@kanagawa-iri.go.jp, Kanagawa Industrial Technology Center, Electronics, 705-1 Shimoimaizumi, Ebina, 243-0435, Japan
Yasuo Hirabayashi
Affiliation:
hirabaya@kanagawa-iri.go.jp, Kanagawa Industrial Technology Center, Electronics, 705-1 Shimoimaizumi, Ebina, 243-0435, Japan
Azusa Kyoduka
Affiliation:
c0313050@st.t-kougei.ac.jp, Tokyo Polytechnic University, 21583 Iiyama, Atsugi, 243-0297, Japan
Yutaka Sawada
Affiliation:
sawada@nano.t-kougei.ac.jp, Tokyo Polytechnic University, 21583 Iiyama, Atsugi, 243-0297, Japan
Yoshihiko Kobayashi
Affiliation:
koba@pc.uec.ac.jp, University of Electro-Communications, Applied Physics and Chemistry, 1-5-1 Chofugaoka, Chofu, 182-8585, Japan
Kichizo Asai
Affiliation:
asai@pc.uec.ac.jp, University of Electro-Communications, Applied Physics and Chemistry, 1-5-1 Chofugaoka, Chofu, 182-8585, Japan
Hiroshi Funakubo
Affiliation:
funakubo.h.aa@m.titech.ac.jp, Tokyo Institute of Technology, Innovative and Engineered Materials, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8502, Japan
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Abstract

A high-quality (100)-oriented epitaxial Fe3Si films were grown on (100) MgO substrates by RF-magnetron sputtering. The full width at half maximum of the Fe3Si 400 rocking curve was 0.18°, when the film was grown at 750°C. The epitaxial films of 100 nm thicknesses had a smooth continuous surface. The coercive field (Hc) was approximately 10 Oe, and the saturation magnetization (Ms) was 900 emu/cm3, which are almost the same as those of bulk Fe3Si. The anisotropy constant (K1) of magnetization indicated that the epitaxial Fe3Si films grown at 750°C mainly consisted of long range ordering phase (DO3 phase) and that the epitaxial films post-annealed at 900°C was constituted with ordering phase.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

1. Sarma, S. Das, Fabian, J., Hu, X. and Zutic, I., Solid State Comm. 119, 207 (2001).Google Scholar
2. Hong, M., Chean, H.S., Kwo, J., Kortan, A.R., Mannaerts, J.P., Weir, B.E. and Feldman, L. C., J. Cryst. Growth 111, 984 (1991).10.1016/0022-0248(91)91119-UGoogle Scholar
3. Hines, W.A., Menotti, A.H., Bundnick, J.I., Burch, T.J., Litrenta, T., Niculescu, V. and Raj, K., Phys. Rev. B 13, 4060 (1976).Google Scholar
4. Groot, R.A., Mueller, F.M., Engen, P.G. and Buschow, K.H.J., Phys. Rev. Lett. 50, 2024 (1983).10.1103/PhysRevLett.50.2024Google Scholar
5. Niu, F., Hoerman, B.H. and Wessels, W., J. Vac. Sci. & Technol. B 18, 2146 (2000).10.1116/1.1305972Google Scholar
6. Sadoh, T., Takeuchi, H., Ueda, K., Kenjo, A. and Miyao, M., Jan. J. Appl. Phys. 45, 3598 (2006).10.1143/JJAP.45.3598Google Scholar
7. Takahashi, M., Arai, H., Tanaka, J. and Wakiyama, T., J. Mag. Soc. Jpn. 10, 225 (1986).10.3379/jmsjmag.10.225Google Scholar
8. Moss, J. and Brown, P. J., J. Phys. F: Met. Phys. 2, 358 (1972).10.1088/0305-4608/2/2/026Google Scholar
9. Goto, M. and Kamimori, T., J. Phys. Soc. Jpn. 52, 3710 (1983).Google Scholar