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Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  15 February 2011

R. Zhang ,
L. Zhang ,
D.M. Hansen ,
Marek P. Boleslawski ,
K.L. Chen ,
D.Q. Lu ,
B. Shen ,
Y.D. Zheng  and
T.F. Kuech
R. Zhang
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706 Department of Physics, Nanjing University, Nanjing 210093, China
L. Zhang
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
D.M. Hansen
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
Marek P. Boleslawski
Affiliation:
Aldrich Chemical, Milwaukee, WI
K.L. Chen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, China
D.Q. Lu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, China
B. Shen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, China
Y.D. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, China
T.F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
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Abstract

Epitaxial lateral overgrowth (ELO) of GaN on SiO2-masked (0001) GaN substrates has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy (HVPE) and metal organic vapor phase epitaxy (MOVPE). Diethyl gallium chloride, (C2H5)2GaCl, was used in as the MOVPE Ga precursor. The lateral and vertical growth rates as well as the overgrowth morphology of ELO GaN structures are dependent on growth temperature, V/III ratio and the in-plane orientation of the mask opening. A high growth temperature and low V/III ratio increase the lateral growth rate and produce ELO structures with a planar surface to the GaN prisms. High-quality coalesced and planar ELO GaN has been fabricated by both growth chemistries. The use of the diethyl gallium chloride source allows for the benefits of HVPE growth to be realized within the MOVPE growth environment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G4.7
Copyright
Copyright © Materials Research Society 1999

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