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Erbium-doped Amorphous- Si-C-O Matrix (a-SiCxOy:Er) - A Novel Silicon-based Material for Near-infrared Optoelectronic Applications

Published online by Cambridge University Press:  01 February 2011

Spyros Gallis ,
Mengbing Huang ,
Vasileios Nikas ,
Harry Efstathiadis ,
Eric Eisenbraun ,
Alain E. Kaloyeros ,
Ei Ei Nyein  and
Uwe Hommerich
Spyros Gallis
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany-SUNY, Albany, New York 12203
Mengbing Huang
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany-SUNY, Albany, New York 12203
Vasileios Nikas
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany-SUNY, Albany, New York 12203
Harry Efstathiadis
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany-SUNY, Albany, New York 12203
Eric Eisenbraun
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany-SUNY, Albany, New York 12203
Alain E. Kaloyeros
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany-SUNY, Albany, New York 12203
Ei Ei Nyein
Affiliation:
Department of Physics, Hampton University, Hampton, VA 23668.
Uwe Hommerich
Affiliation:
Department of Physics, Hampton University, Hampton, VA 23668.
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Abstract

We have synthesized amorphous- SiCxOy (a-SiCxOy) (x, y: 0 - 1.65) materials via thermal chemical vapor deposition (TCVD) at 800°C using a single source oligomer, 2,4,6-trimethyl-2,4,6-trisila-heptane (C7H22Si3) and ultra-high purity oxygen (O2). The Er-doped SiCxOy materials exhibited a strong room-temperature photoluminescence (PL) at ∼1540 nm at an excitation wavelength of 496.5 nm. Furthermore, the infrared PL intensity was found to be highly dependent on the compositions of carbon and oxygen, with the maximum PL intensity obtained for an Er-doped SiC0.50O1.00 thin film, which exhibited a ∼20-times enhancement in the PL intensity as opposed to the Er-doped SiO2 control samples.

The PL intensity decreased significantly as the matrix evolves into either the SiC-like or SiO2-like material. Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS) were used to characterize the local elemental electronic environment in a-SiCxOy. Our work indicates a strong correlation between the emission of Er luminescence and the formation of Si-C-O bonding in materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V6.5
Copyright
Copyright © Materials Research Society 2005

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