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Evidence for Strong Trapping by Ionized Donors of Free Excitions in Excited States for High Purity GaAs and AlGaAs

Published online by Cambridge University Press:  25 February 2011

S. Zemon  and
G. Lambert
S. Zemon
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
G. Lambert
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
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Abstract

Striking increases in the intensity of donor-related, photoluminescence transitions are observed in undoped (1014-1015 cm-3) GaAs for excitation energies (Ee) in the vicinity of the band-gap energy (Eg). The enhancement has maxima at Ee consistent with excitation of the n=2 and 3 states of the free exciton (Xn=2,3) and appears to be correlated to the concentration of ionized donors, suggesting that the effects are related to capture of electron-hole pairs by ionized donors through trapping of Xn=2,3. The enhancement decreases monotonically as Ee increases to values as much as 12 meV above Eg.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 109
Copyright
Copyright © Materials Research Society 1990

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References

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