Experimental results on the temporal response of i/n/i hydrogenated amorphous silicon structures are presented as a function of voltage. The current is initially space charge limited followed by a transition to an emission limited current. The data generally exhibits four subsequent time dependence regimes e.g. :(1) an exponential decay, (2) followed by a t−2 decay, (3) then a t−1 decay and (4) lastly a t(α−1) decay where α<1. The current versus time allows one to derive a density of states. The deduced density of states in the arsenic doped n layers displays a peak at shallow energies followed by an exponential with an energy decay constant of approximately 300°K followed by a flat region and finally followed by a slowly rising density of states. The initial Fermi level is estimated to be within the peak located less than 0.3eV from the mobility edge.