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Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

H. Shibatal ,
Y. Makital ,
H. Katsumata ,
S. Kimura ,
N. Kobayashil ,
M. Hasegawa ,
S. Hishita ,
A. C. Beye ,
H. Takahashi  and
J. Tanabe
...Show all authors
H. Shibatal
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibraki 305, Japan.
Y. Makital
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibraki 305, Japan.
H. Katsumata
Affiliation:
Meiji University, 1-1-1 Higashi-Mita, Tama, Kawasaki 214, Japan.
S. Kimura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibraki 305, Japan.
N. Kobayashil
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibraki 305, Japan.
M. Hasegawa
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibraki 305, Japan.
S. Hishita
Affiliation:
National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukluba, Ibraki 305, Japan.
A. C. Beye
Affiliation:
University Cheikh Anta Diop of Dakar, GPSSM, B.P. 5376, Dakar, Senegal.
H. Takahashi
Affiliation:
Nippon Institute of Technology, 4-1-1, Gakuendai, Miyashirocho, Minamisaitama-gun, Saitama 345, Japan.
J. Tanabe
Affiliation:
Nippon Institute of Technology, 4-1-1, Gakuendai, Miyashirocho, Minamisaitama-gun, Saitama 345, Japan.
S. Uekusa
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibraki 305, Japan.
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Abstract

We have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 517
Copyright
Copyright © Materials Research Society 1996

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References

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