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Failure and Formation of Axial Nanowire Heterostructures in Vapor-Liquid-Solid Growth

Published online by Cambridge University Press:  01 February 2011

Mohanchand Paladugu ,
Jin Zou ,
Ya-Nan Guo ,
Graeme J. Auchterlonie ,
Hannah J. Joyce ,
Qiang Gao ,
H. Hoe Tan ,
Chennupati Jagadish  and
Yong Kim
Mohanchand Paladugu
Affiliation:
m.paladugu@uq.edu.au, The University of Queensland, School of Engineering, Bldg. No: 43, Cooper Road, The Uni of QLD, St. Lucia, QLD, Brisbane, 4072, Australia, +61 432486098
Jin Zou
Affiliation:
j.zou@uq.edu.au, The University of Queensland, School of Engineering, Bldg 50, St. Lucia, Brisbane, 4072, Australia
Ya-Nan Guo
Affiliation:
y.guo@uq.edu.au, The University of Queensland, School of Engineering, Bldg 50, St. Lucia, Brisbane, 4072, Australia
Graeme J. Auchterlonie
Affiliation:
G.Auchterlonie@uq.edu.au, The University of Queensland, Centre for Microscopy and Microanalysis, Bldg 74, St. Lucia, Brisbane, 4072, Australia
Hannah J. Joyce
Affiliation:
hjj109@rsphysse.anu.edu.au, The Australian National University, Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Building 60, Canberra, 0200, Australia
Qiang Gao
Affiliation:
gao109@rsphysse.anu.edu.au, The Australian National University, Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Building 60, Canberra, 0200, Australia
H. Hoe Tan
Affiliation:
hoe109@rsphy1.anu.edu.au, The Australian National University, Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Building 60, Canberra, 0200, Australia
Chennupati Jagadish
Affiliation:
Chennupati.jagadish@anu.edu.au, The Australian National University, Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Building 60, Canberra, 0200, Australia
Yong Kim
Affiliation:
yongkim@dau.ac.kr, Dong-A University, Department of Physics, Busan, N/A, Korea, Republic of
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Abstract

To observe the axial growth behavior of InAs on GaAs nanowires, InAs was grown for different growth durations on GaAs nanowires using Au nanoparticles. Through transmission electron microscopy, we have observed the following evolution steps for the InAs growth. (1) In the initial stages of the InAs growth, InAs cluster into a wedge shape preferentially at an edge of the Au/GaAs interface by minimizing Au/InAs interfacial area; (2) with further growth of InAs, the Au particles move sidewards and then downwards by preserving an interface with GaAs nanowire sidewalls. The lower interfacial energy of Au/GaAs than that of Au/InAs is attributed to be the reason for such Au movement. This downward movement of Au nanoparticle later terminates when the nanoparticle encounters InAs growing radially on the GaAs nanowire sidewalls, and with further supply of In and As vapor reactants, the Au nanoparticles assist the formation of InAs branches. These observations give some insights of vapor-liquid-solid growth and the kinks formation in nanowire heterostructures.

Keywords

nanostructuretransmission electron microscopy (TEM)crystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1058: Symposium JJ – Nanowires–Novel Assembly Concepts and Device Integration , 2007 , 1058-JJ01-09
Copyright
Copyright © Materials Research Society 2008

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References

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