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First-Principles Modeling for Current-Voltage Characteristics of Resistive Random Access Memories

  • Takehide Miyazaki (a1), Hisao Nakamura (a1), Kengo Nishio (a1), Hisashi Shima (a2), Hiroyuki Akinaga (a2) and Yoshihiro Asai (a1)...


We present results of first-principles non-equilibrium Green’s function calculations for current-voltage (IV) characteristics of the electrode/HfO2/electrode model systems. In order to investigate the effect of the electrode materials on the IV characteristics, we considered two transition metals for electrode, Ta and W, which are both body-centered-cubic elemental metals but have different valence numbers. We simulated the ON state by placing oxygen vacancies in the HfO2 layer while the OFF state was modeled with HfO2 without oxygen vacancies. At the OFF state, no electric current flowed for -1 V up to +1 V, as expected. At the ON state, however, we found that the absolute current for the Ta electrode was twice as large as that for the W electrode. The analysis of the IV characteristics shows that the electronic coupling between Ta and HfO2 is substantially stronger than that between W and HfO2. Our study demonstrates the importance of the matching between electrode and insulator materials to achieve a high ON- to OFF-current ratio in ReRAMs at a low bias.



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First-Principles Modeling for Current-Voltage Characteristics of Resistive Random Access Memories

  • Takehide Miyazaki (a1), Hisao Nakamura (a1), Kengo Nishio (a1), Hisashi Shima (a2), Hiroyuki Akinaga (a2) and Yoshihiro Asai (a1)...


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