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First-Principles Modeling for Current-Voltage Characteristics of Resistive Random Access Memories

Published online by Cambridge University Press:  20 June 2013

Takehide Miyazaki ,
Hisao Nakamura ,
Kengo Nishio ,
Hisashi Shima ,
Hiroyuki Akinaga  and
Yoshihiro Asai
Takehide Miyazaki
Affiliation:
Nanosystem Research Institute, National Institute for Advanced Industrial Science and Technology, AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Hisao Nakamura
Affiliation:
Nanosystem Research Institute, National Institute for Advanced Industrial Science and Technology, AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Kengo Nishio
Affiliation:
Nanosystem Research Institute, National Institute for Advanced Industrial Science and Technology, AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Hisashi Shima
Affiliation:
Nanoelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, AIST Tsukuba West, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Hiroyuki Akinaga
Affiliation:
Nanoelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, AIST Tsukuba West, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Yoshihiro Asai
Affiliation:
Nanosystem Research Institute, National Institute for Advanced Industrial Science and Technology, AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Abstract

We present results of first-principles non-equilibrium Green’s function calculations for current-voltage (IV) characteristics of the electrode/HfO2/electrode model systems. In order to investigate the effect of the electrode materials on the IV characteristics, we considered two transition metals for electrode, Ta and W, which are both body-centered-cubic elemental metals but have different valence numbers. We simulated the ON state by placing oxygen vacancies in the HfO2 layer while the OFF state was modeled with HfO2 without oxygen vacancies. At the OFF state, no electric current flowed for -1 V up to +1 V, as expected. At the ON state, however, we found that the absolute current for the Ta electrode was twice as large as that for the W electrode. The analysis of the IV characteristics shows that the electronic coupling between Ta and HfO2 is substantially stronger than that between W and HfO2. Our study demonstrates the importance of the matching between electrode and insulator materials to achieve a high ON- to OFF-current ratio in ReRAMs at a low bias.

Keywords

memoryoxidesimulation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1562: Symposium DD – Emerging Materials and Devices for Future Nonvolatile Memories , 2013 , mrss13-1562-dd13-11
Copyright
Copyright © Materials Research Society 2013 

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