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Formation of Facets at the Solid-Melt Interface in Silicon

Published online by Cambridge University Press:  28 February 2011

Emil Arnold
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, NY 10510
Uzi Landman
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, GA 30332.
S. Ramesh
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, NY 10510
W. D. Luedtke
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, GA 30332.
R. N. Barnett
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, GA 30332.
C. L. Cleveland
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, GA 30332.
A. Martinez
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, NY 10510
H. Baumgart
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, NY 10510
B. Khan
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, NY 10510
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Abstract

We have done experimental and theoretical studies of the origins of facet formation at the solid-liquid interface in laser-beam-melted silicon films. Two laser beams were used to produce a molten zone with a closely controlled thermal profile in a thin single-crystal film of silicon, and the liquid-solid interface was observed in situ. A transition to a faceted structure was found to occur under conditions of near thermal equilibrium. The solidliquid interface was also studied theoretically by means of molecular dynamics simulations, incorporating pair- and three-body terms in the interaction potential. Similarly to the experimental system, the solid-melt interface in the simulated system breaks up into facets defined by (111) planes. The melt region in the vicinity of the faceted planes exhibits a certain degree of ordering due to the influence of the crystalline potential.

Type
Research Article
Copyright
Copyright © Materials Research Society 1986

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References

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