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Formation of GaN Self-Organized Nanotips by Nanomasking Effect

Published online by Cambridge University Press:  21 March 2011

Harumasa Yoshida ,
Tatsuhiro Urushido ,
Hideto Miyake  and
Kazumasa Hiramtsu
Harumasa Yoshida
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Tatsuhiro Urushido
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Hideto Miyake
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Kazumasa Hiramtsu
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
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Abstract

We have successfully fabricated self-organized GaN nanotips by reactive ion etching using chlorine plasma, and have revealed the formation mechanism. Nanotips with a high density and a high aspect ratio have been formed after the etching. We deduce from X-ray photoelectron spectroscopy (XPS) analysis that the nanotip formation is attributed to nanometer-scale masks of SiO2 on GaN. The structures calculated by Monte Carlo simulation of our formation mechanism are very similar to the experimental nanotip structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.52.1
Copyright
Copyright © Materials Research Society 2002

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