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Formation of High Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO

Published online by Cambridge University Press:  10 February 2011

S. C. Song ,
C. H. Lee ,
H. F. Luan ,
D. L. Kwong ,
M. Gardner ,
J. Fulford ,
M. Allen ,
J. Bloom  and
R. Evans
S. C. Song
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
C. H. Lee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
H. F. Luan
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
M. Gardner
Affiliation:
Advanced Micro Devices, Austin, TX 78723
J. Fulford
Affiliation:
Advanced Micro Devices, Austin, TX 78723
M. Allen
Affiliation:
Advanced Micro Devices, Austin, TX 78723
J. Bloom
Affiliation:
GaSonics International, San Jose, CA 95134
R. Evans
Affiliation:
GaSonics International, San Jose, CA 95134
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Abstract

In this paper, we report a novel low thermal budget process (<800°C) for engineered ultra thin oxynitride dielectrics with high nitrogen concentration (>5% a.c.) using vertical high pressure (VHP) process. VHP grown oxynitride films show >1 OX lower leakage current, higher drive current and superior hot-carrier reliability compared to control SiO2 of identical thickness (Tox,eq) grown by RTP in O2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 65
Copyright
Copyright © Materials Research Society 1999

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References

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