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Formation of ZnSe/GaAs Heterovalent Heterostructures by Movpe

Published online by Cambridge University Press:  03 September 2012

Mitsuru Funato
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
Satoshi Aoki
Affiliation:
funato@kuee.kyoto-u.ac.jp
Shizυo Fujita
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
Shigeo Fujita
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
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Abstract

ZnSe/GaAs (001) heterovalent heteгostructures are fabricated by metalorganic vapor phase epitaxy. During the growth, both GaAs and ZnSe surfaces are kept atomically flat to achieve precise control of the interface formation. Interface composition, Ga/As, are controlled by means of either Zn or Se treatment of a GaAs surface, and then ZnSe growth follows. Consequently, it is revealed by X-ray photoemission spectroscopy (XPS) that artificial control of Ga/As from 1.0 to 2.8 leads to the variation of valence band offsets from 0.6 to 1.1 eV. Based on the electron counting model and layer-attenuation model, it is proposed that the As plane just below the interface consists of As, anti-site Ga and As vacancy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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