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GaAs/Ge Crystal Growth on Si and SiO2/Si Substrates

Published online by Cambridge University Press:  25 February 2011

Yoshiro Ohmachi ,
Yukinobu Shinoda  and
Satoshi Oku
Yoshiro Ohmachi
Affiliation:
NTT Electrical Communications Laboratories, Musashino–shi, Tokyo 180, Japan
Yukinobu Shinoda
Affiliation:
NTT Electrical Communications Laboratories, Musashino–shi, Tokyo 180, Japan
Satoshi Oku
Affiliation:
NTT Electrical Communications Laboratories, Musashino–shi, Tokyo 180, Japan
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Abstract

An approach to the composite layer growth of GaAs/Ge on Si(100) and insulator–coated Si(100) has been investigated. To overcome a problem of antiphase disorder of GaAs occurring along with epitaxial growth on Ge, thermal etching on Ge surfaces in hydrogen was introduced just prior to the growth. Antiphase–domain–free GaAs grown on a Ge(100) wafer exhibited mirror surfaces, photoluminescence characteristics comparable to those of homoepitaxial layers, and low etch–pit densities. The autodoping of Ge into GaAs induced a highly doped interfacial layer several thousand angstroms thick. The present study also involves heteroepitaxial growth of Ge on Si by vacuum deposition and Ge crystal growth on insulating layers over Si by LESS method.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 65
Copyright
Copyright © Materials Research Society 1986

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