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Gas-Source Molecular Beam Epitaxy of Electronic Devices

Published online by Cambridge University Press:  10 February 2011

E.A. Beam III ,
B. Brar ,
T.P.E. Broekaert ,
H.F. Chau ,
W. Liu  and
A.C. Seabaugh
E.A. Beam III
Affiliation:
Texas Instruments Incorporated, Corporate R&D/Technology, P.O. Box 655936, M/S 147, Dallas, TX 75265 USA
B. Brar
Affiliation:
Texas Instruments Incorporated, Corporate R&D/Technology, P.O. Box 655936, M/S 147, Dallas, TX 75265 USA
T.P.E. Broekaert
Affiliation:
Texas Instruments Incorporated, Corporate R&D/Technology, P.O. Box 655936, M/S 147, Dallas, TX 75265 USA
H.F. Chau
Affiliation:
Texas Instruments Incorporated, Corporate R&D/Technology, P.O. Box 655936, M/S 147, Dallas, TX 75265 USA
W. Liu
Affiliation:
Texas Instruments Incorporated, Corporate R&D/Technology, P.O. Box 655936, M/S 147, Dallas, TX 75265 USA
A.C. Seabaugh
Affiliation:
Texas Instruments Incorporated, Corporate R&D/Technology, P.O. Box 655936, M/S 147, Dallas, TX 75265 USA
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Abstract

Gas-source molecular beam epitaxy (GSMBE) has been developed into a useful tool for the growth of both optical and electronic device structures. In this paper, we report on the use of tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in GSMBE for the growth of electronic device structures with state-of-the-art performance. Device structures based on both the In0.48Ga0.52P/GaAs and In0.53Ga 0.47As/InP lattice matched materials systems are described. The GSMBE system is based on the use of elemental Group-rn sources and employs thermal crackers for precracking TBA and TBP. Dopant sources include both elemental (Sn and Be) and vapor (CBr4 and SiBr4) sources. Device structures fabricated in the In0.48Ga0.52P/GaAs materials system include single- and double- heterojunction bipolar transistors (SHBTs and DHBTs). Device structures fabricated in the In0.53Ga0.47As/InP materials system include SHBTs, DHBTs, heterojunction field effect transistors (HFETs), and both planar and lateral resonant tunneling diodes (RTDs.) Vertically integrated HFET and multi-RTD heterostructures for high speed logic/memory are also described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 3
Copyright
Copyright © Materials Research Society 1996

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References

1. Panish, M.B., J. Electrochem. Soc. 127, p. 2729 (1980).Google Scholar
2. Panish, M.B. and Temkin, H., Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures, Springer-Verlag, New York (1993).Google Scholar
3. Beam, E.A. III, Henderson, T.S., Seabaugh, A.C. and Yang, J.Y., J. Crystal Growth 116, p. 436 (1992).Google Scholar
4. Beam, E.A. III, Chau, H.F., Henderson, T.S., Liu, W. and Seabaugh, A.C., J. Crystal Growth 136, p. 1 (1994).Google Scholar
5. Beam, E.A. III and Chau, H.F., accepted for publication in J. Crystal Growth 1996.Google Scholar
6. Liu, W., Beam, E.A. III, Kim, T.S. and Khatibzadeh, A., Int. J. High Speed Electronics and Systems, 5, p. 411 (1994).Google Scholar
7. Jackson, S.L., Thomas, S., Fresina, M.T., Ahmari, D.A., Baker, J.E. and Stillman, G.E., Proc. 6th Int. Conf. Indium Phosphide and Related Materials (1994) p. 57.Google Scholar
8. Asbeck, P.M., Farley, C.W., Chang, M.F., Wang, K.C. and Ho, W.J., Proc 2nd Int. Conf. Indium Phosphide and Related Materials (1990) p. 2.Google Scholar
9. Tokumitsu, E., Dentai, A.G., Joyner, C.H. and Chandrasekhar, S., Appi. Phys. Lett. 57, p. 2841 (1990).Google Scholar
10. Chau, H.F. and Beam, E.A. III, unpublished.Google Scholar
11. Chau, H.F., Tserng, H.Q. and Beam, E.A. III, IEEE Microwave and Guided WaveLett. 6, p. 129 (1996).Google Scholar
12. Bahl, S.R., Alamo, J.A del, Dickmann, J. and Schildberg, S., IEEE Trans. Electron Dev. 42, p. 15(1995).Google Scholar
13. Auer, U., Reuter, R., Heedt, C., Kunzel, H., Prost, W. and Tegude, F.J., Proc 6th Int. Conf. Indium Phosphide and Related Materials (1994) p. 443.Google Scholar
14. Seabaugh, A.C., Beam, E.A. III, Taddiken, A.H., Randall, J.N. and Kao, Y.C., IEEE Electron Device Lett. 14, p. 472 (1993).Google Scholar
15. Seabaugh, A.C., Taddiken, A.H., Beam, E.A. III, Randall, J.N., Kao, Y.C. and Newell, B., Electronics Lett. 29, p. 1802 (1993).Google Scholar
16. Seabaugh, A.C., Taddiken, A.H., Beam, E.A. II, Randall, J.N., Kao, Y.C. and Newell, B., IEDM Tech. Dig. (1993) p. 419.Google Scholar
17. Broekaert, T.P.E., Randall, J.N., Beam, E.A. II, Frazier, G., Jovanovic, D., Newell, B.L. and Smith, B.D., 53rd Dev. Res. Conf. Digest (1995) p. 56.Google Scholar
18. Randall, J.N. and Newell, B.L., J. Vac. Sci. Technol. B 12, p. 3631 (1994).Google Scholar
19. Broekaert, T.P.E., Randall, J.N., Beam, E.A. III, Jovanovic, D. and Smith, B.D., to be published.Google Scholar