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Ge2Sb2Te5 Film Deposition and Properties

Published online by Cambridge University Press:  01 February 2011

Mengqi Ye ,
Rong Tao ,
Peijun Ding  and
Abner Bello
Mengqi Ye
Affiliation:
mengqi_ye@amat.com, Applied Materials, Inc., Thin Films Group, 3050 Bowers Avenue, P.O. Box 58039, Santa Clara, CA, 95054, United States
Rong Tao
Affiliation:
rong_tao@amat.com, Applied Materials, Inc., 3050 Bowers Avenue, P.O. Box 58039, Santa Clara, CA, 95054, United States
Peijun Ding
Affiliation:
peijun_ding@amat.com, Applied Materials, Inc., 3050 Bowers Avenue, P.O. Box 58039, Santa Clara, CA, 95054, United States
Abner Bello
Affiliation:
abner_bello@amat.com, Applied Materials, Inc., 3050 Bowers Avenue, P.O. Box 58039, Santa Clara, CA, 95054, United States
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Abstract

Magnetron sputter deposition of Ge2Sb2Te5 film is presented. Good thermal control of the wafer is found critical for maintaining process repeatability. In-situ wafer heating conditions have strong impact on as-deposited Ge2Sb2Te5 film properties such as resistivity, density, stress, composition, and microstructure. The effects of wafer bias and sputtering pressure are also discussed.

Keywords

thin filmsputteringTe
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I11-11
Copyright
Copyright © Materials Research Society 2007

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References

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