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Genesis of Defects in Massively Transformed L10-ordered τ-MnAl Alloys

Published online by Cambridge University Press:  21 March 2011

Cagatay Yanar
Affiliation:
Department of Materials Science and Engineering, University of Pittsburgh, Pittsburgh, PA 15261, USA
Velimir Radmilovic
Affiliation:
National Center for Electron Microscopy, LBNL, Berkeley, CA, and Department of Physical Metallurgy, University of Belgrade, 11001 Belgrade, Yugoslavia
William. A. Soffa
Affiliation:
Department of Materials Science and Engineering, University of Pittsburgh, Pittsburgh, PA 15261, USA
Jorg M. K. Wiezorek
Affiliation:
Department of Materials Science and Engineering, University of Pittsburgh, Pittsburgh, PA 15261, USA
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Abstract

Defects produced in massively transformed L10-ordered τ-MnAl have been characterized by detailed TEM studies. The defect population in massive τ-MnAl comprises arrays of overlapping stacking faults, {111}-conjugated microtwins, thermal antiphase boundaries and dislocations. The genesis of these defects has been attributed to atomic attachment faulting on {111}- and {020}-type facets of the essentially incoherent growth interface between the parent and product phases. The features of the defect genesis in τ-MnAl are discussed with respect to the role of atomic level processes at solid-state transformation interfaces in general and growth interfaces in massively transforming materials systems in particular.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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