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Grain Growth in Polycrystalline Silicon Films

Published online by Cambridge University Press:  22 February 2011

C. V. Thompson
C. V. Thompson*
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.
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Abstract

Experimental observations of recrystallization, normal grain growth and secondary grain growth in silicon films are reviewed. Normal grain growth leads to grain sizes which are approximately equal to the film thickness. Secondary grain growth can lead to larger grains with restricted crystallographic textures. These procesess are affected by the as-deposited or as-crystallized grain structures and orientations. The rate of grain growth has been shown to be higher in phosphorous or arsenic doped films. Ion bombardment, oxidation, and interactions with silicides also lead to increased grain growth rates. Grain growth enhancement has been related to increased point defect concentrations or dopant redistribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 115
Copyright
Copyright © Materials Research Society 1988

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References

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