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Growth and Characterization of 1D Bi2Te3 Nanowires

Published online by Cambridge University Press:  01 February 2011

M. Craps ,
Nick Gothard ,
Rahul Rao ,
Jian He ,
JoAn Hudson ,
Terry M. Tritt  and
Apparao M. Rao
M. Craps
Affiliation:
crapsm@clemson.edu, Clemson University, Physics and Astronomy, United States
Nick Gothard
Affiliation:
ngothar@clemson.edu, Clemson University, Physics and Astronomy, United States
Rahul Rao
Affiliation:
rrao@clemson.edu, Clemson University, Physics and Astronomy, United States
Jian He
Affiliation:
jianhe@clemson.edu, Clemson University, Physics and Astronomy, United States
JoAn Hudson
Affiliation:
joanh@clemson.edu, Clemson University, Physics and Astronomy, United States
Terry M. Tritt
Affiliation:
ttritt@clemson.edu, Clemson University, Physics and Astronomy, United States
Apparao M. Rao
Affiliation:
arao@clemson.edu, Clemson University, Physics and Astronomy, United States
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Abstract

Bulk bismuth telluride (Bi2Te3) is one of the best known thermoelectric materials with a figure of merit ZT ∼1 at room temperature. Theoretical studies have suggested that low-dimensional materials may exhibit ZT values that exceed 1. In this study, we used the pulsed laser vaporization (PLV) method to prepare Bi2Te3 nanowires on silicon and quartz substrates by ablating Bi2Te3 targets in an inert atmosphere. Nano-sized gold or iron catalyst particles were used to seed the growth of the Bi2Te3 nanowires. Results from electron microscopy and Raman spectroscopy are discussed.

Keywords

laser ablationBiRaman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 886: Symposium F – Materials and Technologies fore Direct Thermal-to-Electric Energy Conversion , 2005 , 0886-F03-13
Copyright
Copyright © Materials Research Society 2006

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References

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