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Growth and Characterization of GaAs-Based Heterostructures on Si By Mocvd

Published online by Cambridge University Press:  28 February 2011

W. S. Hobson ,
S. J. Pearton ,
K. T. Short ,
K. S. Jones ,
S. M. Vernon ,
D. C. Jacobson ,
C. R. Abernathy  and
R. Caruso
W. S. Hobson
Affiliation:
AT&t Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&t Bell Laboratories, Murray Hill, NJ 07974
K. T. Short
Affiliation:
AT&t Bell Laboratories, Murray Hill, NJ 07974
K. S. Jones
Affiliation:
University of Florida, Gainesville, FL 32611
S. M. Vernon
Affiliation:
Spire Corporation, Bedford, MA 01730
D. C. Jacobson
Affiliation:
AT&t Bell Laboratories, Murray Hill, NJ 07974
C. R. Abernathy
Affiliation:
AT&t Bell Laboratories, Murray Hill, NJ 07974
R. Caruso
Affiliation:
AT&t Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Abstract: Several different types of GaAs-AlGaAs heterostructures were grown on Si substrates by MOCVD. The defect density in as-grown samples (~108cm−2) was similar to that of GaAs layers grown directly on Si, and the crystalline quality of the material was observed to improve slightly with post-growth annealing at 900°C. We examined the diffusion of both Si and Zn dopants during this type of annealing and found only a small amount of redistribution of both species. Laser annealing of GaAs-on-Si was also examined as a method of reducing the defect density in the material - we observed substantial improvements in surface quality, but no change in sub-surface crystalline quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 147
Copyright
Copyright © Materials Research Society 1988

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References

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