Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Brandt, M. S.
Johnson, N. M.
Molnar, R. J.
Singh, R.
and
Moustakas, T. D.
1993.
Hydrogenation of Gallium Nitride.
MRS Proceedings,
Vol. 325,
Issue. ,
Moustakas, T.D.
1994.
Growth and properties of GaN films.
Vol. 2,
Issue. ,
p.
25.
Matsuoka, Takashi
1995.
Lattice-Matching Growth of InGaAIN Systems.
MRS Proceedings,
Vol. 395,
Issue. ,
Götz, W.
Oberman, D. B.
and
Harris, J. S.
1995.
Defect Studies in n-Type GaN Grown by Molecular Beam Epitaxy.
MRS Proceedings,
Vol. 378,
Issue. ,
Lowndes, Douglas H.
Rouleau, Christopher M.
Geohegan, D. B.
Puretzky, A. A.
Strauss, M. A.
Pedraza, A. J.
Park, J. W.
Budai, J. D.
and
Poker, D. B.
1995.
Pulsed Laser Ablation Growth and Doping of Epitaxial Compound Semiconductor Films.
MRS Proceedings,
Vol. 397,
Issue. ,
Korakakis, D.
Sampath, A.
NG, H.M.
Morales, G.
Goepfert, I.D.
and
Moustakas, T.D.
1995.
Growth and Doping of GaN Directly on 6H-SiC by MBE.
MRS Proceedings,
Vol. 395,
Issue. ,
Orton, J. W.
Lacklison, D. E.
Baba-Ali, N.
Foxon, C. T.
Cheng, T. S.
Novikov, S. V.
Johnston, D. F. C.
Hooper, S. E.
Jenkins, L. C.
Challis, L. J.
and
Tansley, T. L.
1995.
The growth and properties of mixed group V nitrides.
Journal of Electronic Materials,
Vol. 24,
Issue. 4,
p.
263.
Singh, R.
and
Moustakas, T.D.
1995.
Growth of InGaN Films by MBE at the Growth Temperature of GaN.
MRS Proceedings,
Vol. 395,
Issue. ,
Fu, T. C.
Newman, N.
Jones, E.
Chan, J. S.
Liu, X.
Rubin, M. D.
Cheung, N. W.
and
Weber, E. R.
1995.
The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy.
Journal of Electronic Materials,
Vol. 24,
Issue. 4,
p.
249.
Moustakas, T.D.
1995.
Epitaxial Growth of GaN Films Produced by ECR-Assisted MBE.
MRS Proceedings,
Vol. 395,
Issue. ,
Li, Y.
Lu, Y.
Shen, H.
Wraback, M.
Hwang, C.-Y.
Schurman, M.
Mayo, W.
Salagaj, T.
and
Stall, R. A.
1995.
Photoluminescence and Sims Studies of Hydrogen Passivation of Mg-Doped P-Type Gallium Nitride.
MRS Proceedings,
Vol. 395,
Issue. ,
Morkoç, H.
and
Mohammad, S. N.
1995.
High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes.
Science,
Vol. 267,
Issue. 5194,
p.
51.
Johnson, N. M.
Götz, W.
Neugebauer, J.
and
Van de walle, C. G.
1995.
Hydrogen in GaN.
MRS Proceedings,
Vol. 395,
Issue. ,
Orton, J W
1995.
Acceptor binding energy in GaN and related alloys.
Semiconductor Science and Technology,
Vol. 10,
Issue. 1,
p.
101.
Hong Kim, Min
Sone, Cheolsoo
Hyung Yi, Jae
Ok Heur, Soun
and
Yoon, Euijoon
1996.
Nitrogen Plasma Pretreatment of Sapphire Substrates for the GaN Buffer Growth by Remote Plasma Enhanced MOCVD.
MRS Proceedings,
Vol. 449,
Issue. ,
Korakakis, D.
Ng, H.M.
Misra, M.
Grieshaber, W.
and
Moustakas, T.D.
1996.
Growth and Doping of AlGaN Alloys by ECR-assisted MBE.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 1,
Issue. ,
JØrgensen, L. V.
Kruseman, A. C.
Schut, H.
Van Veen, A.
Fanciulli, M.
and
Moustakas, T. D.
1996.
Investigation of Vacancies in GaN by Positron Annihilation.
MRS Proceedings,
Vol. 449,
Issue. ,
Myoung, J. M.
Kim, C.
Shim, K. H.
Gluschenkov, O.
Kim, K.
and
Yoo, M. C.
1996.
High Quality P-Type Gan Films Grown By Plasma-Assistedmolecular Beam Epitaxy.
MRS Proceedings,
Vol. 423,
Issue. ,
Johnson, M. A. L.
Fujita, Shizuo
Rowland, W. H.
Hughes, W. C.
He, Y. W.
El-Masry, N. A.
Cook, J. W.
Schetzina, J. F.
Ren, J.
and
Edmond, J. A.
1996.
MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates.
Journal of Electronic Materials,
Vol. 25,
Issue. 5,
p.
793.
Liliental-Weber, Zuzanna
Ruvimov, S.
Suski, T.
Ager, J. W.
Swider, W.
Chen, Y.
Kisielowski, Ch.
Washburn, J.
Akasaki, I.
Amano, H.
Kuo, C.
and
Imler, W.
1996.
Effect of Si Doping on The Structure of Gan.
MRS Proceedings,
Vol. 423,
Issue. ,