Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-24T00:23:10.286Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Boron Carbide Crystals from a Copper Flux

Published online by Cambridge University Press:  31 January 2011

Yi Zhang ,
James Edgar ,
Jack Plummer ,
Clinton Whiteley ,
Hui Chen ,
Yu Zhang ,
Michael Dudley ,
Yinyan Gong ,
James Gray  and
Martin Kuball
Yi Zhang
Affiliation:
yizh@ksu.edu, Kansas State University, Chemical Engineering, Manhattan, Kansas, United States
James Edgar
Affiliation:
edgarjh@ksu.edu, Kansas State University, Chemical Engineering, Manhattan, United States
Jack Plummer
Affiliation:
JPlumme4@ksu.edu, Kansas State University, Chemical Engineering, Manhattan, Kansas, United States
Clinton Whiteley
Affiliation:
clintonw@ksu.edu, Kansas State University, Chemical Engineering, Manhattan, Kansas, United States
Hui Chen
Affiliation:
huichen@ic.sunysb.edu, Stony Brook University, Materials Science and Engineering, Stony Brook, New York, United States
Yu Zhang
Affiliation:
yummy365@hotmail.com, Stony Brook University, Materials Science and Engineering, Stony Brook, New York, United States
Michael Dudley
Affiliation:
mdudley@notes.ic.sunysb.edu, Stony Brook University, Materials Science and Engineering, Stony Brook, New York, United States
Yinyan Gong
Affiliation:
Yinyan.Gong@bristol.ac.uk, University of Bristol, H.H.Wills Physics Laboratory, Bristol, United Kingdom
James Gray
Affiliation:
James.Gray@bristol.ac.uk, University of Bristol, H.H.Wills Physics Laboratory, Bristol, United Kingdom
Martin Kuball
Affiliation:
Martin.Kuball@bristol.ac.uk, University of Bristol, H.H.Wills Physics Laboratory, Bristol, United Kingdom
Get access

Abstract

Boron carbide crystals ranging in size from 50 microns to several millimeters have been grown from a copper-boron carbide flux at temperatures from 1500°C to 1750°C. The crystal size increased with growth temperature although copper evaporation limited growth at the higher temperatures. Synchrotron X-ray Laue patterns were indexed according to (001) orientation boron carbide structure, indicating the bulk crystals were single crystalline with {001} growth facets. Raman spectrum of boron carbide indicates an improved crystal quality compared to the source powder, but peaks of crystals grown from 11B -enriched source shifted to the lower energy by 1-4 cm−1 from literature values, possibly due to the boron isotope dependency. Five fold symmetry defects and twin planes were common as observed by optical microscope and scanning electron microscope. Raindrop shape etch pits were formed after defect selective etching in molten potassium hydroxide at 600°C for 6 minutes. Typically, the etch pit density was on the order of 106/cm2.

Keywords

crystal growthflux growthneutron irradiation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1164: Symposium L – Nuclear Radiation Detection Materials–2009 , 2009 , 1164-L06-02
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sezer, A.O. and Brand, J.I. Mater. Sci. and Engg. B79, 191 (2001).Google Scholar
2. Emin, D. and Aselage, T.L. J. Appl. Phys. 97, 019 (2005).Google Scholar
3. Robertson, B.W. Adenwalla, S. Harken, A. Welsch, P. Brand, J.I. Dowben, P.A. Classen, J.P. Appl. Phys. Lett. 90, 3644(2002)Google Scholar
4. Caruso, A.N. Bowben, P.A. Balkir, S. Schemm, Nathan, Osberg, Kevin, Fairchild, R.W. Flores, Oscar Barrios, Balaz, Snjezana, Harken, A.D. Robertson, B.W. and Brand, J. I. Mater. Sci and Engg. B 135, 129 (2006)Google Scholar
5. Emin, D. Phys. Today 1, 55(1987).Google Scholar
6. Winter, J. Esser, H.G. Reimer, H. Grobusch, L. Seggern, J. Von and Wienhold, P. J. Nucl. Mat. 176–177, 486 (1990).Google Scholar
7. Shirai, K. and Gonda, S. J. Appl. Phys. 67, 6287 (1990).Google Scholar
8. Sharapov, V.M. Kanaev, A.I. Zakharov, A.P. and Gorodetsky, A.E. J. Nucl. Mat. 508, 191(1992).Google Scholar
9. Byum, D. Hwang, S. Dowben, P.A. Perkins, F.K. Filips, F. and Ianno, N.J. Appl. Phys.Lett. 64, 1968(1994).Google Scholar
10. Deshpande, S.V. Gulari, E. Harris, S.J. and Weiner, A.M. Appl. Phys. Lett., 65, 1757 (1994).Google Scholar
11. Oliveira, J.C. andConde, O. Thin Solid Films 307, 29 (1997).Google Scholar
12. Aselage, T.L. Vendeusen, S.B. and Morosin, B. J. Less-Common Metals 166, 29 (1990).Google Scholar
13. Tallant, D.R. Aselage, T.L. Campbell, A.N. and Emin, D., Phys. Rev. B 40, 5649 (1989).Google Scholar
14. Aselage, T.L. Tallant, D.R. and Emin, D. Phys. Rev. B 56, 3124 (1997).Google Scholar