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Growth Of Diamond Films From C-h-o MixturesM

Published online by Cambridge University Press:  10 February 2011

I. J. Ford
I. J. Ford*
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, U.K.
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Abstract

A simple model of the competition between the growth of diamond and amorphous, graphitic carbon has been extended to include oxygen within the mixture of gases in a chemical vapour deposition (CVD) process. The model is based on linear rate equations which describe the growth and removal of layers of carbonaceous material on the surface of a substrate placed within the CVD reactor. The main effect of oxygen is to tie up a proportion of the available gas-phase carbon in the form of CO, which reduces the flux of reactive carbonaceous material onto the surface. Hydrogen atoms can remove carbonaceous material from the surface, and in addition can perform the key task of cementing such groups into place on the surface to make diamond. Starting with these simple assumptions, it is possible to account for the shape of the diamond domain in the C-H-O phase diagram, namely the boundaries with the domains of graphitic growth and no-growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 19
Copyright
Copyright © Materials Research Society 1996

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References

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