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Growth of epitaxial ZnO films on Si(111)

  • Chunming Jin (a1), Ashutosh Tiwari (a1), A. Kvit (a1) and J. Narayan (a1)
Abstract

Epitaxial ZnO films have been grown on Si(111) substrates by employing a AlN buffer layer during a pulsed laser-deposition process. The epitaxial structure of AlN on Si(111) substrate provides a template for ZnO growth. The resultant films are evaluated by transmission electron microscopy, x-ray diffraction, and electrical measurements. The results of x-ray diffraction and electron microscopy on these films clearly show the epitaxial growth of ZnO films with an orientational relationship of ZnO[0001]||Aln[0001]||Si[111] along the growth direction and ZnO[2 1 1 0]||AlN[2 1 1 0]||Si[0 1 1] along the in-plane direction. High electrical conductivity (103 S/m at 300 K) and a linear I-V characteristics make these epitaxial films ideal for microelectronic, optoelectronic, and transparent conducting oxide applications.

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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