Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-19T20:03:56.254Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Highly Transparent Nano-Crystalline Diamond Films by Microwave CVD

Published online by Cambridge University Press:  10 February 2011

D. M. Bhusari ,
K. H. Chen ,
J. R. Yang ,
S. T. Lin ,
T. Y. Wang  and
L. C. Chen
D. M. Bhusari
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan.
K. H. Chen
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan.
J. R. Yang
Affiliation:
Department of Mechanical Engineering, National Taiwan Institute of Technology, Taipei, Taiwan.
S. T. Lin
Affiliation:
Department of Mechanical Engineering, National Taiwan Institute of Technology, Taipei, Taiwan.
T. Y. Wang
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan.
L. C. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan.
Get access

Abstract

We report here growth of highly transparent nano-crystallinc diamond films on quartz substrates by microwave plasma enhanced CVD. Optical transmittancc of greater than 84% beyond 700 nm has been obtained for films as thick as 1 μm. Such high optical transparency of these films is primarily attributed to the high smoothness of their surface (average roughness of about 60–65 À) as well as the high content of sp3 bonded carbon therein. The effects of methane fraction in the source gas, substrate temperature and grain size of the diamond powder used for substrate pretreatment on the structural and optical properties of these films arc also studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 131
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chcn, K.H., Lai, Y.L., Chen, L.C., Wu, J.Y. and Kao, F.J., Thin Solid films 270, p. 143 (1995).Google Scholar
2. Erz, R., Dotter, W., Jung, K. and Erhardl, H., Diam. Rclat. Mater. 2, p. 449 (1993).Google Scholar
3. Ong, T.P. and Chang, R.P.H., Appl. Phys. Lcll. 55, p. 2063 (1989).Google Scholar
4. Wu, R.L.C., Rai, A.K., Garscaddcn, A., Lcc, P., Desai, H.D. and Miyoshi, K., J. Appl. Phys. 72, p. 110 (1992).Google Scholar
5. Konov, V.I., Smolin, A.A., Ralchenco, V.G., Pimcnov, S.M., Obraztsova, E.D., Loubmin, E.N., Mctcv, S.M. and Sepold, G., Diam. Relat. Maler. 4, p. 1073 (1995).Google Scholar
6. Lee, J., Hong, B., Messier, R. and Collins, R.W., Appl. Phys. Lett. 69, p. 1716 (1996).Google Scholar
7. Merkulov, V.I., Lannin, J.S., Munro, C.H., Ashcr, S.A., Veerasamy, V.S. and Milnc, W.I., Phys. Rev. Lett. 78, p. 4869 (1997).Google Scholar
8. Mott, N.F., Adv. Phys, 16, p. 49 (1967).Google Scholar
9. Tauc, J., in Amorphous' and Liquid Semiconductors. Ed. by Tauc, J. (Plenum Press, 1974), p. 159.Google Scholar