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The Growth of Type-II Infrared Laser Structures

  • M. J. Yang (a1), W. J. Moore (a1), B. R. Bennett (a1), B. V. Shanabrook (a1) and J. O. Cross (a1)...

The MBE growth temperature for InAs/InGaSb/InAs/AlSb mid-infrared lasers has been studied. It is found that the best growth temperature is between 370°C and 420°C. A growth temperature above this range will result in excessive interlayer mixing, which degrades the radiative efficiency.

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8. Yang, M. J., Moore, W. J., Bennett, B. R., Shanabrook, B. V., and Cross, J. O., to be published.
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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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