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The Growth of Type-II Infrared Laser Structures

Published online by Cambridge University Press:  10 February 2011

M. J. Yang ,
W. J. Moore ,
B. R. Bennett ,
B. V. Shanabrook  and
J. O. Cross
M. J. Yang
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375, yang@bloch.nrl.navy.mil
W. J. Moore
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375, yang@bloch.nrl.navy.mil
B. R. Bennett
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375, yang@bloch.nrl.navy.mil
B. V. Shanabrook
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375, yang@bloch.nrl.navy.mil
J. O. Cross
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375, yang@bloch.nrl.navy.mil
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Abstract

The MBE growth temperature for InAs/InGaSb/InAs/AlSb mid-infrared lasers has been studied. It is found that the best growth temperature is between 370°C and 420°C. A growth temperature above this range will result in excessive interlayer mixing, which degrades the radiative efficiency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 11
Copyright
Copyright © Materials Research Society 1998

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References

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