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The Growth of Type-II Infrared Laser Structures

  • M. J. Yang (a1), W. J. Moore (a1), B. R. Bennett (a1), B. V. Shanabrook (a1) and J. O. Cross (a1)...
Abstract
Abstract

The MBE growth temperature for InAs/InGaSb/InAs/AlSb mid-infrared lasers has been studied. It is found that the best growth temperature is between 370°C and 420°C. A growth temperature above this range will result in excessive interlayer mixing, which degrades the radiative efficiency.

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1.McGill T. C. and Collins D. A., Semicond. Sci. Technol. 8, S1 (1993).
2.Boos J. B., Kruppa W., Park D., Elec. Lett. 32, 1624 (1996); and C. R. Bolognesi and D. H. Chow, IEEE Elec. Dev. Lett. 17, 534 (1996).
3.Mailhiot C. and Smith D. L., J. Vac. Sci. Technol. A7, 445 (1989).
4.Yang R. Q., Superlatt. and Microstruct. 17, 77 (1995).
5.Meyer J. R., Hoffman C. A., Bartoli F. J., and Ram-Mohan L. R., Appl. Phys. Lett. 67, 757 (1995).
6.Yang M. J., Moore W. J., Bennett B. R., and Shanabrook B. V., Elec. Lett. (1997).
7.Chiu T. H. and Tsang W. T., J. Appl. Phys. 57, 4572 (1985).
8.Yang M. J., Moore W. J., Bennett B. R., Shanabrook B. V., and Cross J. O., to be published.
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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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