Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-19T11:21:42.727Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth Technique For Large Area Mosaic Diamond Films†

Published online by Cambridge University Press:  25 February 2011

R. W. Pryor ,
M. W. Geis  and
H. R. Clark
R. W. Pryor
Affiliation:
Institute for Manufacturing Research, Wayne State University, Detroit, MI 48201
M. W. Geis
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173
H. R. Clark
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173
Get access

Abstract

A new technique has been developed to grow semiconductor grade diamond substrates with dimensions comparable to those of currently available Si wafers. Previously, the synthetic single crystal diamond that could be grown measured only a few millimeters across, compared with single crystal Si substrates which typically are 10 to 15 cm in diameter. In the technique described, an array of features is first etched in a Si substrate. The shape of the features matches that of inexpensive, synthetic faceted diamond seeds. A diamond mosaic is then formed by allowing the diamond seeds to settle out of a slurry onto the substrate, where they become fixed and oriented in the etched features. For the experiments reported, the mosaic consists of seeds ∼ 100 μm across on 100 μm centers. A mosaic film is obtained by chemical vapor deposition of homoepitaxial diamond until the individual seeds grow together. Although these films contain low angle (<1°) grain boundaries, smooth, continuous diamond films have been obtained with electronic properties substantially better than those of polycrystalline diamond films and equivalent to those of homoepitaxial single crystal diamond films. The influence of growth conditions and seeding procedures on the crystallographic and electronic properties of these mosaic diamond films is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 13
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Davies, G., Diamond (Hilger, Bristol, England, 1984), p. 2.Google Scholar
2. Davies, G., Diamond (Hilger, Bristol, England, 1984), Chap. 4.Google Scholar
3. Wedlake, R. J., in Properties of Diamond, ed. Field, J. E. (Academic, London, 1979), p. 501.Google Scholar
4. Bundy, F. P., Hall, H. T., Strong, H. M., and Wentorf, R. H., Nature 176, 51 (1955).CrossRefGoogle Scholar
5. Anthony, T. R., Banholzer, W. F., Fleischer, J. F., Wei, L., Kuo, P. K., Thomas, R. L., and Pryor, R. W., Phys. Rev. B 42, 1104 (1990).Google Scholar
6. Derjaguin, B. V. and Fedosev, D. V., Diamonds Wrought by Man (State Mutual, New York, 1985), p. 45.Google Scholar
7. Angus, J. C and Hayman, C. C., Science 241, 913 (1988).CrossRefGoogle Scholar
8. Venables, J. D., Status and Applications of Diamond and Diamond-Like Materials: An Emerging Technology (National Academy, Washington, D.C., 1990), Vol. NMAB–445, Chap. 2.Google Scholar
9. Geis, M. W., Smith, H. I., Argoitia, A., Angus, J., Ma, G. H. M., Glass, J. T., Butler, J., Robinson, C. J., and Pryor, R., Appl. Phys. Lett. 58, 2485 (1991).Google Scholar
10. Geis, M. W., patents pending.Google Scholar
11. Pryor, R. W., patents pending.Google Scholar
12. Geis, M. W., Proc. IEEE 79, 669 (1991).CrossRefGoogle Scholar
13. Pryor, R. W., Thomas, R. L., Kuo, P. K., and Favro, L. D., Proc. SPIE 1146, 68 (1989).Google Scholar
14. Pryor, R. W., unpublished.Google Scholar
15. Available from General Electric and De Beers or their representatives.Google Scholar
16. The original MPECVD system was an AsTex Model HPMM, Applied Science and Technology, Inc., Woburn, MA 01801.Google Scholar
17. Pryor, R. W., Kuo, P. K., Wei, L., and Thomas, R. L., Proceedings of the Sixteenth Annual Review of Progress in Quantitative NDE, ed. Thompson, D. O and Chimenti, D. E. (Plenum, New York, 1989), p. 1123.Google Scholar