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Heteroepitaxial Growth of Cubic Gan on GaAs(100) by Reactive Nitrogen Source

Published online by Cambridge University Press:  21 February 2011

Z.Q. He ,
X.M. Ding ,
X.Y. Hou  and
Xun Wang
Z.Q. He
Affiliation:
Surface Physics Laboratory and Fudan T.D.Lee Physics Laboratory, Fudan University, Shanghai 200433, CHINA
X.M. Ding
Affiliation:
Surface Physics Laboratory and Fudan T.D.Lee Physics Laboratory, Fudan University, Shanghai 200433, CHINA
X.Y. Hou
Affiliation:
Surface Physics Laboratory and Fudan T.D.Lee Physics Laboratory, Fudan University, Shanghai 200433, CHINA
Xun Wang
Affiliation:
Surface Physics Laboratory and Fudan T.D.Lee Physics Laboratory, Fudan University, Shanghai 200433, CHINA
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Abstratct

Zinc-blende GaN has been successfully grown on GaAs(100) by using low-energy nitrogen ions produced by a conventional ion gun to replace the ECR plasma source in the traditional MBE facility for nitride growth. Analyses of the epilayer by X-ray diffraction and various electron spectroscopy techniques show that the crystalline quality is fairly good. This is attributed to the dominance of the reactive species N+ in the ionization products under the conditions we use.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 91
Copyright
Copyright © Materials Research Society 1994

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