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Heteroepitaxial Growth of Cubic Gan on GaAs(100) by Reactive Nitrogen Source

  • Z.Q. He (a1), X.M. Ding (a1), X.Y. Hou (a1) and Xun Wang (a1)
Abstratct

Zinc-blende GaN has been successfully grown on GaAs(100) by using low-energy nitrogen ions produced by a conventional ion gun to replace the ECR plasma source in the traditional MBE facility for nitride growth. Analyses of the epilayer by X-ray diffraction and various electron spectroscopy techniques show that the crystalline quality is fairly good. This is attributed to the dominance of the reactive species N+ in the ionization products under the conditions we use.

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